Patents by Inventor Kl HYUNG KO

Kl HYUNG KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICES INCLUDING VARIED DEPTH RECESSES FOR CONTACTS
    Publication number: 20160351570
    Abstract: A first conductivity type finFET device can include first embedded sources/drains of a first material that have a first etch rate. The first embedded sources/drains can each include an upper surface having a recessed portion and an outer raised portion relative to the recessed portion. A second conductivity type finFET device can include second embedded sources/drains of a second material that have a second etch rate than is greater that the first etch rate. The second embedded sources/drains can each include an upper surface that is at a different level than the outer raised portions of the first conductivity type finFET device.
    Type: Application
    Filed: May 10, 2016
    Publication date: December 1, 2016
    Inventors: Sang Jine Park, Kl HYUNG KO, KEE SANG KWON, JAE JIK BAEK, BO UN YOON, YONG SUN KO