Patents by Inventor Klaus A. Anselm

Klaus A. Anselm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for detecting defects in semiconductor insulators
    Patent number: 5798649
    Abstract: The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation. A constant voltage source is applied across the thin film insulator. A low noise amplifier is connected across a resistor which is in series with the insulator. A spectrum analyzer is connected to the low noise amplifier. The power density is obtained by observing the output of a spectrum analyzer. The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
    Type: Grant
    Filed: August 19, 1993
    Date of Patent: August 25, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Michael C. Smayling, Klaus A. Anselm
  • Method for detecting defects in semiconductor insulators
    Patent number: 5648275
    Abstract: The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation. A constant voltage source is applied across the thin film insulator. A low noise amplifier is connected across a resistor which is in series with the insulator. A spectrum analyzer is connected to the low noise amplifier. The power density is obtained by observing the output of a spectrum analyzer. The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: July 15, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: Michael C. Smayling, Klaus A. Anselm
  • Method for detecting defects in semiconductor insulators
    Patent number: 5598102
    Abstract: The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation. A constant voltage source is applied across the thin film insulator. A low noise amplifier is connected across a resistor which is in series with the insulator. A spectrum analyzer is connected to the low noise amplifier. The power density is obtained by observing the output of a spectrum analyzer. The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: January 28, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: Michael C. Smayling, Klaus A. Anselm