Patents by Inventor Klaus C. Wiemer

Klaus C. Wiemer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6936335
    Abstract: An addressable receptor in laminate form, and advantageously in PTF laminate form, comprising a front conductive layer including a plurality of substantially parallel front electrode strips and a rear conductive layer also including a plurality of substantially parallel rear electrode strips. The conductive layers are orientated with respect to each other so that an array of electrode regions of intersection is formed corresponding to the regions at which the front electrode strips cross over the rear electrode strips. The first and second conductive layers are separated by a reactive layer comprising a plurality of defined reactive regions. The reactive regions are deployed in a reactive array substantially in register with the array of electrode regions of intersection, so that the reactive regions are electrically addressable by coordinate pairs of first and second electrode strips. The front electrode strips are partially transparent to radiation in a selected waveband.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: August 30, 2005
    Assignee: OryonTechnologies, LLC
    Inventors: Kenneth Burrows, Klaus C. Wiemer
  • Patent number: 5058491
    Abstract: A building for the manufacture of integrated circuits which includes a manufacturing equipment floor with processing equipment for the manufacture of integrated circuits, a floor under the manufacturing floor has supporting equipment associated with each of the processing equipment, and an upper floor above the manufacturing floow supports a plenum system that provides at least two classes of clean air circulation to the manufacturing floor. Each piece of processing equipment is enclosed with means to separate it from the surrounding air. A clean air input of the highest class of clean air purity is provided to the processing equipment in the enclosure. The air/gas exhaust is directed through an air/gas handling system. Means are also provided to provide the surrounding areas a clean air input of a lower class of clean air purity from the plenum system and the air/gas exhaust directed to an air/gas handling system.
    Type: Grant
    Filed: August 27, 1990
    Date of Patent: October 22, 1991
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Klaus C. Wiemer, James E. Buhler, Rudolf O. Simon, Helmut A. Laub
  • Patent number: 4246786
    Abstract: A fast response temperature sensing device particularly adapted for use in a rarefied fluid media comprises a body of semiconducting material having a precisely predetermined positive temperature coefficient of resistivity in a selected temperature range. The body has ohmic contact element secured thereto to form a small spreading resistance type of resistor element having precisely predetermined resistance characteristics. Leads are electrically connected to the element for connecting the element in an electrical circuit. The element is encapsulated for shielding the element from the environment in a temperature zone to be monitored; and a vane having greater thermal conductivity than the encapsulating material and having greater heat capacity than the resistor element are secured in heat-transfer relation to the element to extend outside the encapsulating material for rapidly conducting heat to the resistor element from the temperature zone.
    Type: Grant
    Filed: June 13, 1979
    Date of Patent: January 27, 1981
    Assignee: Texas Instruments Incorporated
    Inventors: Klaus C. Wiemer, Joseph D. Lejeune
  • Patent number: 4104697
    Abstract: An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.
    Type: Grant
    Filed: January 14, 1977
    Date of Patent: August 1, 1978
    Assignee: Texas Instruments Incorporated
    Inventors: Don L. Kendall, Byron T. Ahlburn, Klaus C. Wiemer
  • Patent number: 4015175
    Abstract: An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.
    Type: Grant
    Filed: June 2, 1975
    Date of Patent: March 29, 1977
    Assignee: Texas Instruments Incorporated
    Inventors: Don L. Kendall, Byron T. Ahlburn, Klaus C. Wiemer