Abstract: An improved monitoring device for monitoring a crystal pulling process taking place in a high pressure drawing chamber in which the mounting for a high pressure window at the same time encloses the end of a quartz rod whose other end projects freely into the drawing chamber ending in the vicinity of the melt with the mount inserted into the device in a pressure tight manner using a nipple threaded into the drawing chamber, the monitoring device permitting good observation of the process without precipitation of the volatile element of the semiconductor compound on the high pressure window.