Abstract: The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas

Abstract: The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate (90), storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate (90).

Abstract: A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

Abstract: The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.

Abstract: The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a Hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface—irradiation and removal step.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

Abstract: An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.

Abstract: The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.

Abstract: This invention relates to electron guns, each comprising of an indirectly heated cathode, a gate electrode and an anode, for generating electron beams of various shapes and power that are preferably used to machine workpieces. Thus cathodes can be used with various geometric designs. Thus cathodes of the most varied geometrical shapes can be used. Along with band cathodes and band cathodes with bodies attached to them, massive cathodes such as bolt-type cathodes can also be applied. Using massive bodies results in a longer service life of the cathode as compared to band cathodes. Another benefit is that the service life of the heat source for the cathode is identical to the service life of the laser used. It is particularly advantageous to place the laser outside the housing, which ensures a very long service life of this source of heat. At the same time, the solution according to the invention is distinguished by an indirect temperature measurement of the cathode.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface —irradiation and removal step.