Patents by Inventor Klaus F. Schugraf

Klaus F. Schugraf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon electrode with increased surface area and method for making same
    Patent number: 6160285
    Abstract: An electrode structure for use on an integrated circuit, and a method for forming the same. The electrode structure is formed by depositing a polysilicon layer on a dielectric layer. The polysilicon layer is then annealed until a plurality of non-contiguous polysilicon clusters are formed. Each of the non-contiguous polysilicon clusters has a base end and a top end. The base ends of the non-contiguous clusters are preferably separated by a spacing (S). Following the annealing step, the non-contiguous polysilicon clusters are connected electrically by depositing a conductive layer having a thickness (T) over the annealed polysilicon layer. The spacing (S) is preferably greater than twice the thickness (T).
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: December 12, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Klaus F. Schugraf, Randhir P. S. Thakur
  • Method for making polysilicon electrode with increased surface area making same
    Patent number: 5885882
    Abstract: An electrode structure for use on an integrated circuit, and a method for forming the same. The electrode structure is formed by depositing a polysilicon layer on a dielectric layer. The polysilicon layer is then annealed until a plurality of non-contiguous polysilicon clusters are formed. Each of the non-contiguous polysilicon clusters has a base end and a top end. The base ends of the non-contiguous clusters are preferably separated by a spacing (S). Following the annealing step, the non-contiguous polysilicon clusters are connected electrically by depositing a conductive layer having a thickness (T) over the annealed polysilicon layer. The spacing (S) is preferably greater than twice the thickness (T).
    Type: Grant
    Filed: July 18, 1995
    Date of Patent: March 23, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Klaus F. Schugraf, Randhir P. S. Thakur