Patents by Inventor Klaus Gnannt

Klaus Gnannt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bonding pad for contacting a device
    Patent number: 7816791
    Abstract: A bonding pad on a substrate has a first metal structure establishing an electrical connection between a device and a bonding area, and a second metal structure arranged at the bonding area. The first metal structure extends, within the bonding area, at least over part of the bonding area between the substrate and the second metal structure, so as to contact the second metal structure, the second metal structure being harder than the first metal structure.
    Type: Grant
    Filed: September 12, 2007
    Date of Patent: October 19, 2010
    Assignee: Infineon Technologies AG
    Inventors: Carsten Ahrens, Sven Albers, Klaus Gnannt, Ulrich Krumbein, Gunther Mackh, Patrick Schelauske, Berthold Schuderer, Georg Seidemann
  • Bonding Pad for Contacting a Device
    Publication number: 20080067682
    Abstract: A bonding pad on a substrate has a first metal structure establishing an electrical connection between a device and a bonding area, and a second metal structure arranged at the bonding area. The first metal structure extends, within the bonding area, at least over part of the bonding area between the substrate and the second metal structure, so as to contact the second metal structure, the second metal structure being harder than the first metal structure.
    Type: Application
    Filed: September 12, 2007
    Publication date: March 20, 2008
    Inventors: Carsten Ahrens, Sven Albers, Klaus Gnannt, Ulrich Krumbein, Gunther Mackh, Patrick Schelauske, Berthold Schuderer, Georg Seidemann
  • Semiconductor structure comprising an electrostatic discharge (ESD) protection device
    Patent number: 6949799
    Abstract: A semiconductor structure including a substrate, a device layer and a contact arranged on the substrate, comprises an ESD protective means, arranged between the substrate and the contact, such, that in the ESD case a breakthrough from the ESD protective means to the contact occurs.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: September 27, 2005
    Assignee: Infineon Technologies AG
    Inventors: Klaus Diefenbeck, Klaus Gnannt, Jakob Huber, Ulrich Krumbein
  • Semiconductor structure comprising an electrostatic discharge (esd) protection device
    Publication number: 20040169229
    Abstract: semiconductor structure having an ESD protective means A semiconductor structure including a substrate (102), a device layer (104) and a contact (108) arranged on the substrate (102), comprises an ESD protective means (144a, 144b), arranged between the substrate (102) and the contact (108), such, that in the ESD case a breakthrough from the ESD protective means (144a, 144b) to the contact (108) occurs.
    Type: Application
    Filed: April 23, 2004
    Publication date: September 2, 2004
    Inventors: Klaus Diefenbeck, Klaus Gnannt, Jakob Huber, Ulrich Krumbein
  • Bipolar Silicon transistor with arsenic and phosphorous ratio
    Patent number: 5965929
    Abstract: A bipolar silicon transistor includes at least one emitter zone with n.sup.+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least one emitter zone. The at least one emitter zone may also have a penetration depth of less than 0.5 .mu.m. A method for producing a bipolar silicon transistor includes implanting a n.sup.+ -doped emitter zone with arsenic, implanting the n.sup.+ -doped emitter zone with phosphorus, setting a ratio in the n.sup.+ -doped emitter zone between the arsenic dopant concentration and phosphorus dopant concentration to between 10:1 and 500:1, and annealing crystal defects.
    Type: Grant
    Filed: March 27, 1996
    Date of Patent: October 12, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Klaus Gnannt, Jakob Huber