Abstract: An electromagnetically actuatable valve for braking force systems in motor vehicles, has a valve housing, with tappet element axially displaceable in the housing cooperating with a valve body and forming a sealing seat at a sealing face. The valve housing has a plurality of radially extending pressure medium outlet bores which are covered by a filter element. The disposition and embodiment of the outlet bores results in a flow course for the pressure medium that reduces the flow resistance of the valve and thus improves the valve properties.

Abstract: A valve arrangement having a valve element disposed longitudinally movably in a valve insert and cooperating with a valve seat in a valve body, which valve element in the installed position is acted upon, by a spring assembly disposed between the valve body and the valve insert, with a force component acting in the opening direction of the valve seat and is actuatable in the closing direction of the valve seat via an electromagnetic actuator. The spring assembly is guided in the radial direction in the region of a bearing face on the valve element. The spring assembly between its contact region on the valve element and its contact region on the valve body is guided in at least one further region in the radial direction on the valve insert.

Abstract: An electromagnetic valve arrangement with a valve element having least one part disposed in a valve chamber defined by a valve insert in the region of a valve seat. An end facing away from the valve chamber of the valve element is operatively connected to an armature and end face of the armature facing toward the valve insert and/or an end face of the valve insert facing toward the end face of the armature is embodied with a surface profile such that a flow cross section, defined by the opposed end faces varies at least regionally in the radial direction and/or in the circumferential direction of the armature.

Abstract: A process for manufacturing a membrane sensor over a silicon substrate, preferably a thermal membrane sensor. A thin layer of silicon carbide or silicon nitride is deposited over an area of porous silicon formed in the surface of the substrate, and then openings that extend as far as the layer of porous silicon are formed in the silicon carbide or silicon nitride layer via a dry etching process. Next, semiconductor structures and conductor path structures are implanted into the upper surface of the membrane layer via lithographic steps, and then the sacrificial layer of porous silicon is removed using a suitable solvent such as ammonia. Thus an empty space that thermally isolates the sensor membrane from the substrate is created beneath the membrane layer.

Abstract: A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

Abstract: A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

Abstract: In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.

Abstract: A person-individual emergency recognition system, having at least one sensor for detecting at least one mechanical or other physical event having an effect on the person and for triggering a safety function, in which the at least one sensor is connected to a transmitter with which the safety function may be triggered at a predefinable or arbitrarily selectable distance with respect to the event location. The transmitter is preferably a component of a conventional mobile radio-communication system, and a device is provided for determining and transmitting the event location, for example, using a conventional global positioning system.

Abstract: An integrated detonation element or firing element including a base member, e.g., a silicon member, and a reaction region associated therewith, is provided. The reaction region includes porous silicon and an oxidizing agent for silicon. An arrangement is provided with which a chemical reaction is initiated between the oxidizing agent and the porous silicon. The detonation or firing element is suitable principally for use in a microreactor; in a microbooster, e.g., for course correction of satellites; as a firing element in a gas generator for a belt tensioner or an airbag, e.g., in motor vehicles; or as a primer for the ignition of explosive charges.

Abstract: A method for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate is described. The method includes the following steps: a first amount of energy is supplied by heating at least the deposition surface; and an ionized inert gas is conducted, at least from time to time, onto the deposition surface in order to supply, at least from time to time, a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface. The first amount of energy is less than the energy amount necessary for the epitaxial deposition of atoms or molecules of the reactive gas on the deposition surface. A sum of the first energy amount and the second energy equaling, at least from time to time, a total amount of energy that is sufficient for the epitaxial deposition of atoms or molecules of the reactive gas onto the deposition surface.

Abstract: In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.

Abstract: A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

Abstract: With a sensor and method, it is possible for platinum resistor elements to be used advantageously as heating elements, temperature sensors, printed circuit traces, or as chemically resistant electron beam sensitive layers. To ensure a long-lasting adhesion of the platinum resistance layer to a dielectric substrate, even during exposure to temperatures which are elevated over ambient temperature and under dry and most atmospheric conditions, a thin adhesion layer of platinum silicide, for example, is deposited between the platinum resistance layer and the dielectric substrate. Resistor elements patterned from the platinum layer can advantageously be used in temperature sensors, mass flow sensors, chemical sensors, gas sensors, or humidity sensors.

Abstract: A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Abstract: A sensor has a thin film element, the thin film element having a temperature-dependent electrical resistance. The thin film element includes a platinum layer, which is doped with zircon or zircon oxide. The thin film element can be arranged on a membrane to create a mass airflow sensor.

Abstract: An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.

Abstract: A method for fabricating metal micropatterns. Trenches are introduced into a polymer layer. These trenches are filled with the metal micropatterns using an electroplating process. Before the deposition of the metal micropatterns, the side walls of the trenches are covered with insulating layers which adhere to the metal micropatterns after the polymer layer is removed.

Abstract: An acceleration sensor is composed of a three layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.

Abstract: A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.

Abstract: An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.