Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.

Abstract: The invention concerns a passive terahertz radiation source configured to emit electromagnetic radiation having frequency in the range of 10 GHz to 50 THz and a method for generating a terahertz radiation. The passive terahertz radiation source comprises: a source of a pulsed excitation light; an emitter comprising one or more emitter elements, each emitter element comprising a semiconductor layer being arranged such that at least a portion of a first major surface of said semiconductor layer is exposed to the excitation light, wherein each emitter element is configured such that upon exposure to the excitation light, a gradient of the charge carrier density is generated in the semiconductor layer in the area of transition between a first area of the semiconductor layer and a second area of the semiconductor layer, the gradient being substantially parallel to the first major surface of the semiconductor layer.