Abstract: The invention relates to an energy-resolving detection system for detecting radiation (4). The energy-resolving detection system comprises a first layer (21) for absorbing a part of the radiation (4) and a radiation quanta counting unit comprising a second layer (26) for counting radiation quanta of the radiation (4). A read-out unit (29) is coupled with the radiation quanta counting unit for reading out the radiation quanta counting unit. The first layer (21) and second layer (26) are arranged such that the radiation (4), which is incident on the detection system and which reaches the second layer (26), has passed the first layer (21).

Abstract: An x-ray detector has a sensor (24) absorbing x-ray quanta of polychromatic spectra and generating an electric sensor signal corresponding to the absorbed x-ray quanta. There is at least one counting channel (430) including a plurality of discriminators (420) each counting a number of charge signals (450) detected at a different respective threshold since a beginning of a measurement interval and an integrating channel (440) which measures overall charge of the charge signals detected since the beginning of the measurement interval.

Abstract: The invention relates to an Anti-Scatter-Grid (ASG) with lamellae (2) that absorb incident radiation (1, 8) and that produce an electrical signal proportional to the amount of absorbed radiation. The lamellae (2) may particularly consist of a semiconductor material in which photons produce electron-hole pairs that can be detected with the help of electrodes (3, 4, 6) on the sidewalls of the lamellae (2). The amount of absorbed scattered (8) or primary (1) radiation may thus be determined in a spatially resolved way, allowing to correct the image generated by an array (5) of sensor units (9).

Abstract: The invention relates to a microelectronic system, particularly for an X-ray detector, comprising a semiconductor layer (1) with an array of pixels (P) which are composed of photosensitive components (3) and associated electronic circuits (4). An insulating passivation layer (5) with recesses (5a) in its surface is disposed between the semiconductor layer (1) and a scintillator (8). A shielding metal (6) for the protection of the electronic circuits (4) from X-radiation may be disposed in the recesses (5a) of the passivation layer (5). Furthermore, the recesses may contain glue for the fixation of the scintillator (8), wherein the passivation layer (5) additionally serves as a spacer between scintillator (8) and semiconductor layer (1).

Abstract: The invention relates to an X-ray detector with detector elements (1) arranged in a layer. The detector elements (1) contain a scintillator element (2) for the conversion of X-rays (X) into photons (v), a photodiode (5) for detection of the photons (v), and a processing circuit (4) for the processing of electric signals generated by the photodiode (5). In order to protect the electronics (4) from X-rays a shielding (3) of variable effective thickness (d1, d2) is disposed in front of the electronics (4). This shielding (3) can in particular be L-shaped. By reduction of the effective thickness of the shielding (3) to a necessary minimum the volume of the scintillator unit (2) can be maximized.