Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: For a process for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectric materials are extruded at a temperature below their melting point and a pressure in the range from 300 to 1 000 MPa.

Abstract: Preparation of ene adducts, especially polyisobutylsuccinic anhydrides, by thermally reacting olefins (“enes”), especially polyisobutylenes, with vinylic carbonyl compounds (“enophiles”), especially maleic anhydride, using microwave radiation.

Abstract: Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a mixture of alkali metal sulfide and sulfur as a catalyst.

Abstract: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te??(I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 ?V/K at a temperature of 25° C.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1-x(Sn2±ySb2±zTe5)x ??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: Iron pentacarbonyl is prepared by reacting iron with carbon monoxide in suspension and in the presence of a polysulfide of the general formula RSxR? as a catalyst, where R is an organic radical and x is a number from 2 to 8.

Abstract: In a photovoltaic cell having a photovoltaically active semiconductor material constituted by a plurality of metals or metal oxides, the photovoltaically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I) MexSAySBz??(I) with Me=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB=B, C, Si, Ge, Sb, Se or Te, where SA and SB respectively come from different groups of the periodic table, x, y, z are independent of one another and can take values from 0.

Abstract: Capacitors having an inert porous shaped body onto which a first electrically conductive layer, a second layer of barium titanate and a further electrically conductive layer have been applied.

Abstract: The present invention relates to compounds having antibiotic activity which are obtained from body fluids of mollusks, namely of certain West-African snails, to therapeutic drugs comprising these compounds, and to the use thereof for the preparation of a therapeutic drug for controlling infectious pathogens in humans and animals.

Abstract: In a thermoelectric generator or Peltier arrangement having a thermoelectrically active semiconductor material constituted by a plurality of metals or metal oxides the thermoelectrically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I) MexSAySBz  (I) with Me=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB=B, C, Si, Ge, Sb, Se or Te, where SA and SB respectively come from different groups of the periodic table, x, y, z independently of one another have values from 0.