Patents by Inventor Klaus Roeschlau
Klaus Roeschlau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10068893Abstract: The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.Type: GrantFiled: May 29, 2015Date of Patent: September 4, 2018Assignee: INFINEON TECHNOLOGIES AGInventors: Jens Schneider, Klaus Roeschlau, Harald Gossner
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Publication number: 20150262993Abstract: The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.Type: ApplicationFiled: May 29, 2015Publication date: September 17, 2015Inventors: Jens Schneider, Klaus Roeschlau, Harald Gossner
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Patent number: 9048096Abstract: The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.Type: GrantFiled: August 24, 2007Date of Patent: June 2, 2015Assignee: Infineon Technologies AGInventors: Jens Schneider, Klaus Roeschlau, Harald Gossner
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Patent number: 8129249Abstract: Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.Type: GrantFiled: September 9, 2010Date of Patent: March 6, 2012Assignee: Infineon Technologies AGInventors: Karlheinz Mueller, Klaus Roeschlau
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Patent number: 8021952Abstract: Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.Type: GrantFiled: July 15, 2009Date of Patent: September 20, 2011Assignee: Infineon Technologies AGInventors: Karlheinz Mueller, Klaus Roeschlau
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Patent number: 7943928Abstract: An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.Type: GrantFiled: November 21, 2006Date of Patent: May 17, 2011Assignee: Infineon Technologies AGInventors: Michael Runde, Gernot Langguth, Klaus Roeschlau, Karlheinz Mueller
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Patent number: 7767528Abstract: A field effect transistor (FET) and fabrication method are disclosed. The FET includes a drift region formed in a substrate. A trench adjoins the drift region and contains at least one control region and a connection region. An inversion channel region is isolated from the control region. A portion of the trench extends to the same depth as a second trench that insulates the FET from other components formed in the substrate. Insulating material is disposed between the trench below the control region and the control region. An insulating layer insulates the FET from the substrate. The trench and/or the connection region may extend into the insulating layer or may be isolated from the insulating layer via the drift region.Type: GrantFiled: December 6, 2005Date of Patent: August 3, 2010Assignee: Infineon Technologies AGInventors: Karlheinz Müller, Klaus Röschlau
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Patent number: 7582948Abstract: Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.Type: GrantFiled: July 14, 2006Date of Patent: September 1, 2009Assignee: Infineon Technologies AGInventors: Karlheinz Müller, Klaus Röschlau
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Publication number: 20090050970Abstract: The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.Type: ApplicationFiled: August 24, 2007Publication date: February 26, 2009Inventors: Jens Schneider, Klaus Roeschlau, Harald Gossner
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Publication number: 20080035924Abstract: An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.Type: ApplicationFiled: November 21, 2006Publication date: February 14, 2008Inventors: Michael Runde, Gernot Langguth, Klaus Roeschlau, Karlheinz Mueller
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Publication number: 20070023865Abstract: Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.Type: ApplicationFiled: July 14, 2006Publication date: February 1, 2007Inventors: Karlheinz Mueller, Klaus Roeschlau
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Patent number: 6852598Abstract: A method for the fabrication of a DMOS transistor structure provides the advantage that, through the use of a protective layer, the DMOS transistor structure, which has already been substantially completed, is protected from the adverse effects of further process steps. The DMOS gate electrode is not, as is customary in the prior art, patterned using a single lithography step, but, rather, the patterning of the DMOS gate electrode is split between two lithography steps. In a first lithography step, substantially only the source region of the DMOS transistor structure is opened. Therefore, the electrode layer that is still present can be used as a mask for the subsequent fabrication of the body region.Type: GrantFiled: April 25, 2003Date of Patent: February 8, 2005Assignee: Infineon Technologies AGInventors: Karlheinz Müller, Klaus Röschlau, Cajetan Wagner