Patents by Inventor Klaus Schottmann

Klaus Schottmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DMOS transistor having an increased breakdown voltage and method for production
    Patent number: 9070768
    Abstract: A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material.
    Type: Grant
    Filed: February 15, 2010
    Date of Patent: June 30, 2015
    Assignees: X-FAB Semiconductor Foundries AG, Texas Instruments Inc
    Inventors: Ralf Lerner, Phil Hower, Gabriel Kittler, Klaus Schottmann
  • DMOS TRANSISTOR HAVING AN INCREASED BREAKDOWN VOLTAGE AND METHOD FOR PRODUCTION
    Publication number: 20120306010
    Abstract: A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material.
    Type: Application
    Filed: February 15, 2010
    Publication date: December 6, 2012
    Inventors: Ralf Lerner, Phil Hower, Gabriel Kittler, Klaus Schottmann