Patents by Inventor Klaus W. Schwarz

Klaus W. Schwarz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8865572
    Abstract: A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: October 21, 2014
    Assignee: International Business Machines Corporation
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Patent number: 8865571
    Abstract: A method for manipulating dislocations from a semiconductor device includes directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam. Manipulating the plurality of dislocations includes directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the a light-emitting beam.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: October 21, 2014
    Assignee: International Business Machines Corporation
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Publication number: 20140154872
    Abstract: A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
    Type: Application
    Filed: February 7, 2014
    Publication date: June 5, 2014
    Applicant: International Business Machines Corporation
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Publication number: 20140154873
    Abstract: A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.
    Type: Application
    Filed: February 7, 2014
    Publication date: June 5, 2014
    Applicant: International Business Machines Corporation
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Publication number: 20120294322
    Abstract: A system for manipulating dislocations on semiconductor devices, includes a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body having a plurality of dislocations, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam.
    Type: Application
    Filed: August 2, 2012
    Publication date: November 22, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Patent number: 8138066
    Abstract: A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: March 20, 2012
    Assignee: International Business Machines Corporation
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
  • Publication number: 20100081259
    Abstract: A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
    Type: Application
    Filed: October 1, 2008
    Publication date: April 1, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Chung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott