Abstract: The inventive device for cleaning substrates, especially semiconductor wafers, comprises a treatment basin for receiving at least one substrate, a cover for sealing said treatment basin, a first feeding device for controllably feeding in a reactive gas, a second feeding device for controllably feeding in at least one moist fluid for promoting a reaction between the reactive gas and a deposit to be removed from the substrate and a control device for controlling the concentration of moisture in the treatment basin.

Abstract: In a method for drying substrates, in particular, semiconductor wafers, an especially residue-free drying of the substrates results when, during removal of the substrates from a liquid, a meniscus of the liquid forming at the transition between the substrate surface and the liquid surface is heated. A device for performing the method is disclosed.

Abstract: In order to optimize flow conditions in a device (1) for treating substrates (2) in a treatment basin (3) that is filled with treatment fluid, said device comprising at least one diffusor (12) to introduce the fluid into the treatment basin (3), the distance between the diffusor (12) and the substrates (2) can be regulated. The invention also relates to a method for regulating said distance. According to an additional measure to improve flow conditions in said device, the diffusor (12) has a plate (18) that is curved cylindrically toward the substrates (2) and outlets (20), the cylindrical axes thereof extending perpendicularly in relation to the planes of the substrates.

Abstract: In a method for drying substrates, in particular, semiconductor wafers, an especially residue-free drying of the substrates results when, during removal of the substrates from a liquid, a meniscus of the liquid forming at the transition between the substrate surface and the liquid surface is heated. A device for performing the method is disclosed.