Abstract: Some embodiments of a system and a method to provide comprehensive application programming interfaces to a logical volume manager have been presented. For instance, a processing device running on a server may provide a library having a set of application programming interfaces to interface an application and a logical volume manager (LVM). In response to an error occurring while running the application in operation with the LVM, the processing device may return an error string in a natural language, a piece of programming code associated with the error, and an error code associated with the error using one or more of the set of application programming interfaces.

Abstract: Some embodiments of a system and a method to provide comprehensive application programming interfaces to a logical volume manager have been presented. For instance, a processing device running on a server may provide a library having a set of application programming interfaces to interface an application and a logical volume manager (LVM). In response to an error occurring while running the application in operation with the LVM, the processing device may return an error string in a natural language, a piece of programming code associated with the error, and an error code associated with the error using one or more of the set of application programming interfaces.

Abstract: The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.

Abstract: A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to delimit monocrystalline silicon semiconductor regions and/or structures to prevent undesirable current flow.

Abstract: A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided to delimit the monocrystalline Si semiconductor structures to prevent undesired current flow, for example between two monocrystalline devices of an integrated circuit. The polycrystalline silicon of the barrier regions has a substantially lower electrical conductivity than the monocrystalline regions, and consequently it is possible to spatially selectively dope portions the barrier region so as to provide regions which electrically contact a monocrystalline silicon region. In a preferred embodiment a polycrystalline silicon region within the barrier region is doped so that it forms a pn-junction with the adjacent monocrystalline semiconductor region and can be used, for example, as an emitter zone of a bipolar device.

Abstract: A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided to delimit the monocrystalline Si semiconductor structures to prevent undesired current flow, for example between twso monocrystalline devices of an integrated circuit. The polycrystalline silicon of the barrier regions has a substantially lower electrical conductivity than the monocrystalline regions, and consequently it is possible to spatially selectively dope portions the barrier region so as to provide regions which electrically contact a monocrystalline silicon region. In a preferred embodiment a polycrystalline silicon region within the barrier region is doped so that it forms a pn-junction with the adjacent monocrystalline semiconductor region and can be used, for example, as an emitter zone of a bipolar device.

Abstract: A pair of panels is located substantially in a common plane, the panels having juxtaposed edge portions bounded by edge faces which define with one another an elongated gap. Elastically yieldable sealing strips overlie the gap and the edge portions at opposite sides of the common plane, and pressure-exerting elements press these sealing strips into sealing engagement with the edge portions in order to seal the gap.