Patents by Inventor Klyofumi Ogino

Klyofumi Ogino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120094412
    Abstract: As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
    Type: Application
    Filed: December 22, 2011
    Publication date: April 19, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Osamu NAKAMURA, Klyofumi Ogino