Patents by Inventor Klyoko Keuchi

Klyoko Keuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6835616
    Abstract: In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is formed, the sacrificial layer surrounding the floating metal structure is etched to create a unity-k dielectric region separating the floating metal structure from the base layer. The unity-k dielectric region also separates the floating metal structure from another floating metal structure. In one embodiment, a noble gas fluoride such as xenon difluoride is used to etch a sacrificial layer of polycrystalline silicon.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: December 28, 2004
    Assignee: Cypress Semiconductor Corporation
    Inventors: Mira Ben-Tzur, Krishnaswamy Ramkumar, James Hunter, Thurman J. Rodgers, Mike Bruner, Klyoko Keuchi