Patents by Inventor Klyoshi Ogata

Klyoshi Ogata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing thin film transistor on unannealed glass substrate
    Patent number: 6861299
    Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
    Type: Grant
    Filed: April 2, 2003
    Date of Patent: March 1, 2005
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba
  • Method of manufacturing thin film transistor
    Publication number: 20030189205
    Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
    Type: Application
    Filed: April 2, 2003
    Publication date: October 9, 2003
    Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba
  • Thin film transistor and method for manufacturing the same
    Patent number: 6570184
    Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: May 27, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba
  • THIN FILM TRANSISTOR
    Publication number: 20030042484
    Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
    Type: Application
    Filed: January 18, 2002
    Publication date: March 6, 2003
    Inventors: Kazuhiko Horikoshi, Klyoshi Ogata, Takuo Tamura, Miwako Nakahara, Makoto Ohkura, Ryoji Oritsuki, Yasushi Nakano, Takeo Shiba