Abstract: Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5??(I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH??(II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.

Abstract: The present invention relates to specific, novel tantalum and niobium compounds which can serve as starting materials for the preparation of chemical vapour deposition (CVD) precursors.

Abstract: Methods of stabilizing thiophene derivatives of the general formula (I) by treatment with basic compounds: wherein R1 and R2 each independently represents a moiety selected from the group consisting of hydrogen, optionally substituted C1-20 alkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, optionally substituted C1-20 oxyalkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, or wherein R1 and R2 together represent a fused cyclic moiety selected from the group consisting of optionally substituted C1-20 dioxyalkylene groups and C1-20 dioxyarylene groups; and stabilized thiophene derivatives that can be prepared by such methods.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

Abstract: Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5 ??(I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH ??(II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.

Abstract: Electrolyte capacitors containing certain polythiophenes are described. More particularly, the polythiophenes have backbones containing repeating units of the following general formula (I) and/or repeating units of the following general formula (II), wherein A is, for example, a C1-C5-alkylene radical, R is, for example, a C1-C18-alkyl radical, and x is an integer from 0 to 8. Also described are dispersions comprising such polythiophenes, and the use of such polythiophenes or dispersions thereof for producing conductive layers.

Abstract: The present invention relates to special, novel tantalum and niobium compounds, the use thereof for the deposition of tantalum- or niobium-containing layers by means of chemical vapour deposition and the tantalum- or niobium-containing layers produced by this process.

Abstract: The present invention provides a new process for separating zirconium and hafnium compounds, in particular to remove traces of zirconium compounds from hafnium compounds, using fractional crystallisation, as well as hafnium compounds obtainable in accordance with this process.

Abstract: Methods of stabilizing thiophene derivatives of the general formula (I) by treatment with basic compounds: wherein R1 and R2 each independently represents a moiety selected from the group consisting of hydrogen, optionally substituted C1-20 alkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, optionally substituted C1-20 oxyalkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, or wherein R1 and R2 together represent a fused cyclic moiety selected from the group consisting of optionally substituted C1-20 dioxyalkylene groups and C1-20 dioxyarylene groups; and stabilized thiophene derivatives that can be prepared by such methods.

Abstract: A novel process for the preparation of high-purity zirconium, hafnium, tantalum and niobium alkoxides (alcoholates), novel tantalum and niobium compounds and a process for their preparation are provided. The process comprises the steps of mixing crude metal alkoxides M(OR)x having a halogen impurity of at least 0.05 wt. %, with an alcohol ROH, in which R is a C1-C12-alkyl radical, and subsequently or simultaneously metering in an excess of ammonia, based on the amount of mononuclear or polynuclear halogen-containing metal alkoxides.

Abstract: The invention relates to formulations comprising polythiophenes A) comprising at least one polythiophene containing recurring units of the general formula (I-a) and/or (I-b) and at least two further polymers, the use thereof and electroluminescent arrangements comprising hole-injecting layers comprising these formulations.

Abstract: The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.

Abstract: A novel process for the preparation of high-purity zirconium, hafnium, tantalum and niobium alkoxides (alcoholates), novel tantalum and niobium compounds and a process for their preparation are provided. The process comprises the steps of mixing crude metal alkoxides M(OR)x having a halogen impurity of at least 0.05 wt. %, with an alcohol ROH, in which R is a C1-C12-alkyl radical, and subsequently or simultaneously metering in an excess of ammonia, based on the amount of mononuclear or polynuclear halogen-containing metal alkoxides.

Abstract: A process for producing hafnium(III) nitride (HfN) or zirconium nitride coatings by means of the CVD method (chemical vapour deposition) from a reactive gas on a substrate surface, the HfN coating or ZrN coating and their use are described. In the process, a hafnium or zirconium tetrakis(dialkylamide) having the general formula Hf(NR1R2)4 or Zr(NR1R2)4 wherein R1 and R2 denote identical or different, straight-chain or branched C1 to C4 alkyl radicals, is used as the Hf precursor or Zr precursor and a hydrazine derivative having the general formula H2N—NR3R4 wherein R3 denotes a straight-chain or branched C1 to C4 alkyl radical and R4 independently denotes a C1 to C4 alkyl radical or H, is used as the reactive gas.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R?C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5?optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR?R? (hydrazido(?1), wherein R, R? and R? h

Abstract: The production of electrically conductive polythiophenes by reaction of 2,5-dihalogen-3,4-ethylene dioxythiophenes with 3,4-ethylene dioxythiophenes in a solvent or liquid phase is provided. These polythiophenes can be used as a plastic or lacquer additive to provide antistatic properties.

Abstract: Described is an electrolytic capacitor that includes: (a) a layer of an oxidizable metal; (b) a layer of an oxide of the oxidixable metal; (c) a solid electrolyte; and (d) a plurality of contacts. The solid electrolyte includes a polythiophene having recurring units represented by the following formulas (I-a) and/or (I-b), Also described are processes for producing electrolytic capacitors, and conductive layers that include such polythiophenes.

Abstract: The invention relates to a process for preparing compounds of the general formula (I) to novel compounds of this substance class and also to their use as important precursors or for preparing important precursors for ?-conjugated polymers.

Abstract: The invention relates to phosphorescent or luminescent conjugated polymers, whose emission is based on the phosphorescence of covalently bonded metal complexes, optionally combined with the fluorescence of the polymer chain. The invention also relates to a method for producing said polymers and to their use in electroluminescent assemblies.

Abstract: The invention relates to compounds containing optionally substituted 3,4-methylenedioxythiophene units (thieno[3,4-d]-1,3-dioxole units), the production thereof and their use as organic semi-conductors.