Patents by Inventor Knut Beekmann

Knut Beekmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for treating a semi-conductor substrate
    Patent number: 7923383
    Abstract: This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: April 12, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Knut Beekmann, Guy Patrick Tucker
  • Method and apparatus for forming a film on a substrate
    Patent number: 7309662
    Abstract: This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.
    Type: Grant
    Filed: June 26, 2000
    Date of Patent: December 18, 2007
    Assignee: Aviza Europe Limited
    Inventors: Katherine Giles, Knut Beekmann, Christopher David Dobson, John MacNeil, Antony Paul Wilby
  • Method of forming a diffusion barrier
    Patent number: 7202167
    Abstract: A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: April 10, 2007
    Assignee: Aviza Technology Limited
    Inventors: Knut Beekmann, Kathrine Giles
  • Diffusion barrier
    Publication number: 20050042887
    Abstract: A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
    Type: Application
    Filed: September 22, 2004
    Publication date: February 24, 2005
    Inventors: Knut Beekmann, Kathrine Giles
  • Method of deposting a dielectric film
    Publication number: 20040217346
    Abstract: This invention relates to a method of depositing a dielectric film on a substrate surface having metal lines thereon with at least some spacings between 4 &mgr;m and 20 &mgr;m including reacting at least one silane containing gas and at least one of oxygen or an oxygen containing gas in a chamber to form a film on the surface of the substrate within the chamber wherein the chamber pressure is below 850 mT and wherein spaces between the metal lines are at least substantially filled by the film.
    Type: Application
    Filed: January 27, 2004
    Publication date: November 4, 2004
    Inventors: Liam Joseph Cunnane, Knut Beekmann
  • Method and apparatus for treating a semi-conductor substrate
    Publication number: 20040043631
    Abstract: This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised.
    Type: Application
    Filed: March 28, 2003
    Publication date: March 4, 2004
    Inventors: Knut Beekmann, Guy Patrick Tucker
  • Diffusion barrier
    Publication number: 20030118845
    Abstract: A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
    Type: Application
    Filed: December 6, 2002
    Publication date: June 26, 2003
    Inventors: Knut Beekmann, Kathrine Giles
  • Deposition apparatus and method
    Patent number: 5492737
    Abstract: A reactor 10 defines a chamber 11 in which are disposed an upper electrode 12 and a lower workpiece electrode 13. The upper electrode is connected to a R.F. supply whilst the lower electrode is connected to a stress control unit 14. The stress control unit is used to adjust or maintain the effective resistance of the connection between the workpiece electrode 13 and ground.
    Type: Grant
    Filed: August 1, 1994
    Date of Patent: February 20, 1996
    Assignee: Electrotech Equipments Limited
    Inventors: Christopher Dobson, Adrian Kiermasz, Knut Beekmann, Christine Shearer, Edmond Ling, Alan Winn, Rob Wilby