Abstract: A high-frequency (HF) driver circuit for an acousto-optical component includes an HF power amplifier connected to a voltage regulator for supply with a supply voltage and a bias voltage generator connected to an input of the HF power amplifier via a switch. The HF driver circuit can include a measurement device configured to measure a temperature of the HF power amplifier and a compensation device configured to control the bias voltage generator according to the temperature. The bias voltage generator is configured to provide a bias voltage to the HF power amplifier. By switching in the bias voltage, the HF power amplifier can be adjusted to a low quiescent current. By switching off the bias voltage, the HF power amplifier can be very rapidly and effectively blocked. As a result, very rapid switching-on and switching-off times, e.g., in a range of 10 to 50 ns, can be achieved.

Abstract: A high-frequency (HF) driver circuit for an acousto-optical component includes an HF power amplifier connected to a voltage regulator for supply with a supply voltage and a bias voltage generator connected to an input of the HF power amplifier via a switch. The HF driver circuit can include a measurement device configured to measure a temperature of the HF power amplifier and a compensation device configured to control the bias voltage generator according to the temperature. The bias voltage generator is configured to provide a bias voltage to the HF power amplifier. By switching in the bias voltage, the HF power amplifier can be adjusted to a low quiescent current. By switching off the bias voltage, the HF power amplifier can be very rapidly and effectively blocked. As a result, very rapid switching-on and switching-off times, e.g., in a range of 10 to 50 ns, can be achieved.

Abstract: An amplifier array includes a servo amplifier, which has a reference signal input, a return signal input, and an output signal connection, which supplies an output signal path, a reference signal generator, which supplies reference signals with different level heights to the reference signal input, and with a return, which supplies a signal, attenuated by a value of the feedback attenuation, from the output path as a return signal to the return signal input, whereby the servo amplifier supplies an amplified difference between the reference signal and return signal in the output signal path. The amplifier array has a connectable bypass gain path, which in the connected state is supplied phase-coupled to the reference signal generator and which supplies a bypass output signal in the output path.

Abstract: An amplifier array includes a servo amplifier, which has a reference signal input, a return signal input, and an output signal connection, which supplies an output signal path, a reference signal generator, which supplies reference signals with different level heights to the reference signal input, and with a return, which supplies a signal, attenuated by a value of the feedback attenuation, from the output path as a return signal to the return signal input, whereby the servo amplifier supplies an amplified difference between the reference signal and return signal in the output signal path. The amplifier array has a connectable bypass gain path, which in the connected state is supplied phase-coupled to the reference signal generator and which supplies a bypass output signal in the output path.

Abstract: A SMD with an RF semiconductor chip (1) encapsulated in a plastic housing is provided. The device has at least one active RF component or an integrated RF circuit with terminal locations, these being contacted by bond wires (4) in the interior of the housing to interconnects of a system carrier (2, 3) that form the outer terminals, the semiconductor chip to be secured on the system carrier. The housing is cost-beneficial and has good RF properties even at extremely high frequencies, e.g., above 2.4 GHz. The system carrier (2, 3) is formed as a co-planar three-band stripline composed of at least one inner RF conductor (3) and outer conductors (7) proceeding at a lateral spacing therefrom which serve as ground terminal. The outer conductors (7) form a planar connection in the housing interior on which the semiconductor chip (1) is secured lying opposite the end of the inner RF conductor (3).

Abstract: A high-frequency transistor has a suitably doped and structured semiconductor chip (1) that is composed of a doped Si substrate and has base, collector and emitter contactings (2, 3, 4). The chip (1) is surrounded by a housing (8), the contacts being connected to the respective base, collector and emitter terminals (6, 7, 5) of the housing. With the housing the transistor has a high gain at frequencies above 1 GHz. The base, collector and emitter contacts (2, 3, 4) are provided at the upper side of the semiconductor chip (1). The semiconductor chip (1) has its underside arranged on the emitter terminal (5) of the housing (8) which is fashioned as HF ground. The emitter contact (4) is connected over a short distance to the emitter terminal (5) of the housing (8). The base and collector contacts (2, 3) are each respectively connected via at least one bond wire (9) to the respective base or collector terminals (6, 7).