Patents by Inventor Knut Deppert
Knut Deppert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11702761Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.Type: GrantFiled: January 13, 2021Date of Patent: July 18, 2023Assignee: ALIGNEDBIO ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Publication number: 20210130979Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.Type: ApplicationFiled: January 13, 2021Publication date: May 6, 2021Inventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 10920340Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.Type: GrantFiled: January 17, 2019Date of Patent: February 16, 2021Assignee: AlignedBio ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Publication number: 20200032416Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input.Type: ApplicationFiled: January 17, 2019Publication date: January 30, 2020Inventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 10196755Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.Type: GrantFiled: January 19, 2017Date of Patent: February 5, 2019Assignee: SOL VOLTAICS ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 10036101Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.Type: GrantFiled: September 2, 2016Date of Patent: July 31, 2018Assignee: QUNANO ABInventors: Lars Samuelson, Martin Magnusson, Knut Deppert, Magnus Heurlin
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Patent number: 9954060Abstract: The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.Type: GrantFiled: March 11, 2016Date of Patent: April 24, 2018Assignee: QUNANO ABInventors: Lars Samuelson, Knut Deppert, Jonas Ohlsson, Martin Magnusson
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Publication number: 20170198409Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.Type: ApplicationFiled: January 19, 2017Publication date: July 13, 2017Inventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Publication number: 20170051432Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.Type: ApplicationFiled: September 2, 2016Publication date: February 23, 2017Inventors: Lars Samuelson, Martin Magnusson, Knut Deppert, Magnus Heurlin
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Patent number: 9574286Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.Type: GrantFiled: May 24, 2013Date of Patent: February 21, 2017Assignee: SOL VOLTAICS ABInventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Patent number: 9447520Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.Type: GrantFiled: May 11, 2011Date of Patent: September 20, 2016Assignee: QUNANO ABInventors: Lars Samuelson, Martin Magnusson, Knut Deppert, Magnus Heurlin
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Publication number: 20160268374Abstract: The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The 10 electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.Type: ApplicationFiled: March 11, 2016Publication date: September 15, 2016Inventors: Lars SAMUELSON, Knut DEPPERT, Jonas OHLSSON, Martin MAGNUSSON
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Patent number: 9305766Abstract: The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.Type: GrantFiled: December 22, 2010Date of Patent: April 5, 2016Assignee: QUNANO ABInventors: Lars Samuelson, Knut Deppert, Jonas Ohlsson, Martin Magnusson
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Publication number: 20150152570Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.Type: ApplicationFiled: May 24, 2013Publication date: June 4, 2015Inventors: Greg Alcott, Martin Magnusson, Olivier Postel, Knut Deppert, Lars Samuelson, Jonas Ohlsson
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Publication number: 20140345686Abstract: A method for forming wires, including providing catalytic seed particles suspended in a gas, providing gaseous precursors that comprise constituents of the wires to be formed and growing the wires from the catalytic seed particles. The wires may be grown in a temperature range between 425 and 525 C and may have a pure zincblende structure. The wires may be III-V semiconductor nanowires having a Group V terminated surface and a <111>B crystal growth direction.Type: ApplicationFiled: February 1, 2013Publication date: November 27, 2014Inventors: Magnus Heurlin, Martin H. Magnusson, Knut Deppert, Lars Samuelson
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Publication number: 20130203242Abstract: The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.Type: ApplicationFiled: December 22, 2010Publication date: August 8, 2013Applicant: Qunano ABInventors: Lars Samuelson, Knut Deppert, Jonas Ohlsson, Martin Magnusson
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Publication number: 20130098288Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.Type: ApplicationFiled: May 11, 2011Publication date: April 25, 2013Applicant: QUNANO ABInventors: Lars Samuelson, Martin Magnusson, Knut Deppert, Magnus Heurlin
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Publication number: 20060057360Abstract: A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material.Type: ApplicationFiled: November 12, 2004Publication date: March 16, 2006Inventors: Lars Samuelson, Knut Deppert