Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.

Abstract: A method for producing a crystalline solar cell having a p-doped silicon substrate with an n-doped region on the front side and also at least one antireflection layer is provided. The method includes uniformly applying a solution containing phosphoric acid to the entire front-side surface of the solar cell, forming phosphosilicate glass in a first thermal treatment step applied to the solar cell, and, in the first thermal treatment step or a subsequent thermal treatment step, forming silicon-containing precipitates near the surface with a homogeneous or substantially homogeneous surface coverage in a layer on the front-side surface of the substrate in the range of between 5% and 100%.

Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.

Abstract: A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.

Abstract: A method for the wet-chemical etching of a solar cell emitter is provided. The method performs homogeneous etching using an alkaline etching solution containing at least one oxidizing agent selected from the group consisting of peroxodisulphates, peroxomonosulphates and hypochlorite.

Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.

Abstract: A method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness d1 has a layer thickness d2. In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d3 where d3>d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2.