Patents by Inventor Ko-Bin Kao
Ko-Bin Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11899368Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.Type: GrantFiled: August 9, 2022Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Publication number: 20230335545Abstract: A method (of manufacturing conductors for a semiconductor device) includes: forming active regions (ARs) in a first layer, the ARs extending in a first direction; forming a conductive layer over the first layer; forming first, second and third caps over the conductive layer, the caps extending in a second direction perpendicular to the first direction, and the caps having corresponding first, second and third sensitivities that are different from each other; removing portions of the conductive layer not under the first, second or third caps resulting in gate electrodes under the first caps and first and second drain/source (D/S) electrodes correspondingly under the second or third caps; and selectively removing portions of corresponding ones of the first D/S electrodes and the second D/S electrodes.Type: ApplicationFiled: June 26, 2023Publication date: October 19, 2023Inventors: Kam-Tou SIO, Chih-Liang CHEN, Hui-Ting YANG, Shun Li CHEN, Ko-Bin KAO, Chih-Ming LAI, Ru-Gun LIU, Charles Chew-Yuen YOUNG
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Patent number: 11688730Abstract: A system that generates a layout diagram has a processor that implements a method, the method including: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.Type: GrantFiled: April 8, 2021Date of Patent: June 27, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kam-Tou Sio, Chih-Liang Chen, Hui-Ting Yang, Shun Li Chen, Ko-Bin Kao, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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Publication number: 20220382161Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Patent number: 11454891Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.Type: GrantFiled: July 12, 2021Date of Patent: September 27, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Publication number: 20220082468Abstract: A system for detecting leakage of a liquid supply pipe includes a pipe casing for enclosing an end portion of the liquid supply pipe adjoined to a nozzle and a sensor system configured to detect presence of a liquid leaked from the liquid supply pipe at the end portion. The sensor system is in alignment with the end portion of the liquid supply pipe.Type: ApplicationFiled: November 23, 2021Publication date: March 17, 2022Inventors: Yu Kai CHEN, Li-Jen WU, Chin-Kun FANG, Ko-Bin KAO
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Patent number: 11199466Abstract: A system for detecting leakage of a liquid supply pipe includes a pipe casing for enclosing an end portion of the liquid supply pipe adjoined to a nozzle and a sensor system configured to detect presence of a liquid leaked from the liquid supply pipe at the end portion. The sensor system is in alignment with the end portion of the liquid supply pipe.Type: GrantFiled: July 17, 2019Date of Patent: December 14, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu Kai Chen, Chin-Kun Fang, Ko-Bin Kao, Li-Jen Wu
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Publication number: 20210341843Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Publication number: 20210225831Abstract: A system that generates a layout diagram has a processor that implements a method, the method including: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.Type: ApplicationFiled: April 8, 2021Publication date: July 22, 2021Inventors: Kam-Tou SIO, Chih-Liang CHEN, Hui-Ting YANG, Shun Li CHEN, Ko-Bin KAO, Chih-Ming LAI, Ru-Gun LIU, Charles Chew-Yuen YOUNG
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Patent number: 11061333Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.Type: GrantFiled: February 26, 2018Date of Patent: July 13, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Patent number: 11029603Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.Type: GrantFiled: December 19, 2018Date of Patent: June 8, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Kai Chen, Forster Yuan, Ko-Bin Kao, Shi-Ming Wang, Su-Yu Yeh, Li-Jen Wu, Oliver Yu
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Patent number: 11004709Abstract: A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.Type: GrantFiled: September 11, 2018Date of Patent: May 11, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Chieh Hsieh, Su-Yu Yeh, Ko-Bin Kao, Chia-Hung Chung, Li-Jen Wu, Chun-Yu Chen, Hung-Ming Chen, Yong-Ting Wu
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Patent number: 10978439Abstract: A method of generating a layout diagram includes: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.Type: GrantFiled: August 19, 2019Date of Patent: April 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kam-Tou Sio, Chih-Liang Chen, Chih-Ming Lai, Charles Chew-Yuen Young, Hui-Ting Yang, Ko-Bin Kao, Ru-Gun Liu, Shun Li Chen
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Patent number: 10943802Abstract: The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.Type: GrantFiled: December 27, 2018Date of Patent: March 9, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Shi-Ming Wang, Su-Yu Yeh, Li-Jen Wu, Oliver Yu, Wen-Shiung Chen
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Patent number: 10763113Abstract: A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.Type: GrantFiled: August 15, 2019Date of Patent: September 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yung-Sung Yen, Chun-Kuang Chen, Ko-Bin Kao, Ken-Hsien Hsieh, Ru-Gun Liu
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Publication number: 20200103756Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.Type: ApplicationFiled: December 19, 2018Publication date: April 2, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Kai CHEN, Forster Yuan, Ko-BIn Kao, Shi-Ming Wang, Su-Yu Yeh, Li-Jen Wu, Oliver Yu
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Publication number: 20200072696Abstract: A system for detecting leakage of a liquid supply pipe includes a pipe casing for enclosing an end portion of the liquid supply pipe adjoined to a nozzle and a sensor system configured to detect presence of a liquid leaked from the liquid supply pipe at the end portion. The sensor system is in alignment with the end portion of the liquid supply pipe.Type: ApplicationFiled: July 17, 2019Publication date: March 5, 2020Inventors: Yu Kai CHEN, Chin-Kun FANG, Ko-Bin KAO, Li-Jen WU
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Publication number: 20200043762Abstract: The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.Type: ApplicationFiled: December 27, 2018Publication date: February 6, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Kai CHEN, Chia-Hung CHUNG, Ko-Bin KAO, Shi-Ming WANG, Su-Yu YEH, Li-Jen WU, Oliver YU, Wen-Shiung CHEN
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Publication number: 20190378712Abstract: A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.Type: ApplicationFiled: August 15, 2019Publication date: December 12, 2019Inventors: Yung-Sung YEN, Chun-Kuang CHEN, Ko-Bin KAO, Ken-Hsien HSIEH, Ru-Gun LIU
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Publication number: 20190371784Abstract: A method of generating a layout diagram includes: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.Type: ApplicationFiled: August 19, 2019Publication date: December 5, 2019Inventors: Kam-Tou SIO, Chih-Liang CHEN, Chih-Ming LAI, Charles Chew-Yuen YOUNG, Hui-Ting YANG, Ko-Bin KAO, Ru-Gun LIU, Shun Li CHEN