Patents by Inventor Ko Hisamoto

Ko Hisamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6610987
    Abstract: In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing electrons e− generated by a microwave neutralizer 14, the shutter plate 62 shields the substrate 38 before and after the milling processing of the substrate 38, and the voltage of a power supply 34 is lowered when the shutter plate 62 is opened and closed so as to limit the amount of ion beam IB irradiation, thereby suppressing charge-up on the surface of the substrate 38.
    Type: Grant
    Filed: February 25, 2002
    Date of Patent: August 26, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihiro Kimura, Ko Hisamoto, Takaharu Sugiura, Yusuke Narita
  • Publication number: 20020175296
    Abstract: In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing electrons e− generated by a microwave neutralizer 14, the shutter plate 62 shields the substrate 38 before and after the milling processing of the substrate 38, and the voltage of a power supply 34 is lowered when the shutter plate 62 is opened and closed so as to limit the amount of ion beam IB irradiation, thereby suppressing charge-up on the surface of the substrate 38.
    Type: Application
    Filed: February 25, 2002
    Publication date: November 28, 2002
    Inventors: Yoshihiro Kimura, Ko Hisamoto, Takaharu Sugiura, Yusuke Narita