Abstract: A semiconductor device is provided. The semiconductor device includes a core structure, a first pattern and a second pattern. The core structure is disposed on a substrate. The first pattern covers a sidewall of a bottom portion of the core structure. The top surface of the first pattern is lower than a top surface of the core structure. The second pattern is disposed on the first pattern and covering a top portion of the core structure. A sidewall of the top portion of the core structure and the top surface of the core structure are covered by the second pattern. The second pattern has an upper portion tapered away from the substrate. A material of the first pattern is different from a material of the second pattern.

Abstract: A semiconductor device is provided. The semiconductor device includes a core structure, a first pattern and a second pattern. The core structure is disposed on a substrate. The first pattern covers a sidewall of a bottom portion of the core structure. The top surface of the first pattern is lower than a top surface of the core structure. The second pattern is disposed on the first pattern and covering a top portion of the core structure. A sidewall of the top portion of the core structure and the top surface of the core structure are covered by the second pattern. The second pattern has an upper portion tapered away from the substrate. A material of the first pattern is different from a material of the second pattern.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A core structure and a first material layer are formed on a substrate in order. A top surface of the first material layer is lower than a top surface of the core structure. A second pattern is formed on an exposed surface of the core structure. The method of forming the second pattern includes forming a second material layer on the exposed surface of the core structure and the top surface of the first material layer and performing an anisotropic etching on the second material layer. The first material layer is patterned by using the second pattern as a mask to form a first pattern. The step of forming the second material layer and the step of performing an anisotropic etching on the second material layer are performed in the same etching chamber.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A core structure and a first material layer are formed on a substrate in order. A top surface of the first material layer is lower than a top surface of the core structure. A second pattern is formed on an exposed surface of the core structure. The method of forming the second pattern includes forming a second material layer on the exposed surface of the core structure and the top surface of the first material layer and performing an anisotropic etching on the second material layer. The first material layer is patterned by using the second pattern as a mask to form a first pattern. The step of forming the second material layer and the step of performing an anisotropic etching on the second material layer are performed in the same etching chamber.