Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements. The semiconductor device also includes a light-adjusting structure disposed on the substrate. The light-adjusting structure includes a patterned multi-film having a plurality of trenches that correspond to the first photoelectric conversion elements. The first photoelectric conversion elements are used for sensing near infrared light, and the second photoelectric conversion elements are used for sensing visible light.

Abstract: A sensor device is provided. The sensor device includes a first substrate, a second substrate, a flow channel and a first reaction group. The second substrate is disposed opposite the first substrate. The flow channel is disposed between the first substrate and the second substrate, and the flow channel includes a fluidic boundary. The first reaction group is disposed on the first substrate and includes a first reaction site, a second reaction site and a third reaction site. The first reaction site is closer to the fluidic boundary than the second reaction site, and a size of the first reaction site is greater than or equal to a size of the second reaction site. The second reaction site is closer to the fluidic boundary than the third reaction site, and the size of the second reaction site is greater than a size of the third reaction site.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element, a first light-shielding layer disposed on the substrate and having a first aperture, a light-transmitting layer disposed on the first light-shielding layer, at least one second light-shielding layer disposed in the light-transmitting layer and having a second aperture, and a light-condensing structure disposed on the light-transmitting layer. The orthogonal projection of the second aperture on the bottom surface of the substrate has a long axis of symmetry and a short axis of symmetry perpendicular to the long axis of symmetry.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element, a first light-shielding layer disposed on the substrate and having a first aperture, a light-transmitting layer disposed on the first light-shielding layer, at least one second light-shielding layer disposed in the light-transmitting layer and having a second aperture, and a light-condensing structure disposed on the light-transmitting layer. The orthogonal projection of the second aperture on the bottom surface of the substrate has a long axis of symmetry and a short axis of symmetry perpendicular to the long axis of symmetry.

Abstract: An aspect of the present invention provides an optical imaging device including a first detecting unit. The first detecting unit includes a plurality of first pixels, a first opaque layer and at least one first micro-lens. The plurality of first pixels respectively has a plurality of first optoelectronic elements. The first opaque layer has at least one opening and is disposed over the plurality of first optoelectronic elements. The at least one first micro-lens is disposed over the first opaque layer, and overlaps at least one of the plurality of first pixels.

Abstract: An optical fingerprint sensor is provided. The optical fingerprint sensor includes a substrate, a plurality of light-shielding layers and a plurality of groups of microlenses. The substrate has a plurality of photoelectric conversion units disposed therein. The light-shielding layers are sequentially disposed on the substrate. Each light-shielding layer includes a plurality of apertures formed therein. Each group of microlenses is disposed above the apertures formed in an uppermost light-shielding layer and overlies one photoelectric conversion unit.

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate including a plurality of pixels, each pixel including a plurality of subpixels designed to emit light with different colors. The plurality of subpixels includes a first subpixel designed to emit red light, a second subpixel designed to emit green light, and a third subpixel designed to emit blue light. The first subpixel includes a first light source formed on the substrate, a red light-emitting layer covering the first light source, and a first yellow color filter covering the red light-emitting layer. The second subpixel includes a second light source formed on the substrate, a green light-emitting layer covering the second light source, and a second yellow color filter covering the green light-emitting layer. The third subpixel includes a third light source formed on the substrate. A method for fabricating the light-emitting device is also provided.

Abstract: A light filter structure is provided. The light filter structure includes a first filter layer disposed over the substrate. The first filter layer has a transmittance greater than 50% in a first waveband, wherein the first filter layer is an interference-type filter. The light filter structure further includes a second filter layer disposed over the substrate. The second filter layer has a transmittance greater than 50% in a second waveband, wherein the second filter layer is an absorption-type filter. The first waveband partially overlaps the second waveband at the wavelength in a third waveband, and the third waveband is in an IR region. Furthermore, an image sensor used as a time-of-flight image sensor is also provided.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate including a plurality of pixels, each pixel including a plurality of subpixels designed to emit light with different colors. The plurality of subpixels includes a first subpixel designed to emit red light, a second subpixel designed to emit green light, and a third subpixel designed to emit blue light. The first subpixel includes a first light source formed on the substrate, a red light-emitting layer covering the first light source, and a first yellow color filter covering the red light-emitting layer. The second subpixel includes a second light source formed on the substrate, a green light-emitting layer covering the second light source, and a second yellow color filter covering the green light-emitting layer. The third subpixel includes a third light source formed on the substrate. A method for fabricating the light-emitting device is also provided.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.

Abstract: A spectrum-inspection device includes a substrate including a first photodiode and a second photodiode. The spectrum-inspection device also includes an interference-type filter disposed over the first and second photodiodes. The interference-type filter allows a first light beam with wavelength of a multi-band to pass through. The multi-band includes a first waveband, a second waveband, a third waveband, and a fourth waveband. The spectrum-inspection device also includes a first absorption-type filter disposed over the first and second photodiodes. The first absorption-type filter allows a second light beam with wavelength of a first region to pass through. The spectrum-inspection device further includes a second absorption-type filter disposed over the second photodiode. The second absorption-type filter is disposed over the first absorption-type filter and allows a third light beam with wavelength of a second region to pass through, wherein the second region overlaps the first region.

Abstract: A filter collimator is provided. The filter collimator includes a substrate having a photodiode. The filter collimator also includes an interference-type and an absorption-type filter film disposed over the substrate. When a first light is incident at a first angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a first waveband, and when a second light is incident at a second angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a second waveband, the absorption-type filter film has a transmittance greater than 50% in a third waveband, and wherein the first waveband partially overlaps the third waveband, the second waveband does not overlap the third waveband, and the second angle is greater than the first angle.

Abstract: A filter collimator is provided. The filter collimator includes a substrate having a photodiode. The filter collimator also includes an interference-type and an absorption-type filter film disposed over the substrate. When a first light is incident at a first angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a first waveband, and when a second light is incident at a second angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a second waveband, the absorption-type filter film has a transmittance greater than 50% in a third waveband, and wherein the first waveband partially overlaps the third waveband, the second waveband does not overlap the third waveband, and the second angle is greater than the first angle.

Abstract: An optical sensor includes a sensing layer, a first shading filter, a second shading filter, and an alignment mark. The sensing layer includes an active area, a shading area, and a peripheral area. The sensing layer includes sensing units located in the active area. The first shading filter is disposed on the shading area. The second shading filter is disposed on the first shading filter. The alignment mark is disposed on the peripheral area. When a light beam is emitted to the shading area, the second shading filter is configured to block a first component of the light beam, and the first shading filter is configured to block a second component of the light beam.

Abstract: An optical sensor includes a sensing layer, a first shading filter, a second shading filter, and an alignment mark. The sensing layer includes an active area, a shading area, and a peripheral area. The sensing layer includes sensing units located in the active area. The first shading filter is disposed on the shading area. The second shading filter is disposed on the first shading filter. The alignment mark is disposed on the peripheral area. When a light beam is emitted to the shading area, the second shading filter is configured to block a first component of the light beam, and the first shading filter is configured to block a second component of the light beam.

Abstract: A color filter array having a lower density of the color blue is provided. The color filter array includes: a plurality of color filter units arranged in a 3×3 array. The color filter units include a blue filter and a plurality of other filters, and the blue filter is disposed in the center of each 3×3 array, wherein a number of the blue filter is fewer than that of each kind of the other filters in each 3×3 array.