Abstract: A light source module, including a substrate, a plurality of light-emitting elements, and a quantum dot film is provided. The substrate has a bearing surface, and the plurality of light-emitting elements is disposed on the bearing surface. Each light-emitting element includes a first light-emitting chip and a second light-emitting chip. The first light-emitting chip is adapted to emit blue light. The second light-emitting chip is disposed beside the first light-emitting chip and is adapted to emit red light. The quantum dot film is disposed on the bearing surface, and adapted to convert blue light into green light. The plurality of light-emitting elements is located between the substrate and the quantum dot film. A display device of the invention is further provided.

Abstract: An electronic device, capable of identifying and displaying an object, includes an image capturing unit, a display unit and a processing unit. The image capturing unit is configured to capture the object. The display unit includes a transparent display panel and a backlight module, wherein the transparent display panel has a viewing side and a back side opposite to the viewing side, and the backlight module is disposed between the back side and the object. The processing unit is electrically connected to the image capturing unit, the transparent display panel and the backlight module, and is configured to receive an image signal captured by the image capturing unit to identify the object according to the image signal, control the transparent display panel to display information frame corresponding to an identifying result, and turn on/off the backlight module. An object identifying method for the electronic device is also provided.

Abstract: A display box is capable of supporting an electronic device. The electronic device is capable of emitting an image beam. A display box includes a box, a light-transmitting plate and a pivoting carrier. The box has a top-side opening and a viewing opening. The light-transmitting plate is obliquely arranged in the box and is capable of reflecting the image beam passing through the viewing opening to a target. The pivoting carrier has an accommodating recess and a first pivot axis. The pivoting carrier is disposed on the box. The pivoting carrier is pivoted beside the top-side opening by the first pivot axis. The electronic device is disposed in the accommodating recess, wherein the pivoting carrier rotates by the first pivot axis to make the electronic device face different positions.

Abstract: A display box is capable of supporting an electronic device. The electronic device is capable of emitting an image beam. A display box includes a box, a light-transmitting plate and a pivoting carrier. The box has a top-side opening and a viewing opening. The light-transmitting plate is obliquely arranged in the box and is capable of reflecting the image beam passing through the viewing opening to a target. The pivoting carrier has an accommodating recess and a first pivot axis. The pivoting carrier is disposed on the box. The pivoting carrier is pivoted beside the top-side opening by the first pivot axis. The electronic device is disposed in the accommodating recess, wherein the pivoting carrier rotates by the first pivot axis to make the electronic device face different positions.

Abstract: An electronic device, capable of identifying and displaying an object, includes an image capturing unit, a display unit and a processing unit. The image capturing unit is configured to capture the object. The display unit includes a transparent display panel and a backlight module, wherein the transparent display panel has a viewing side and a back side opposite to the viewing side, and the backlight module is disposed between the back side and the object. The processing unit is electrically connected to the image capturing unit, the transparent display panel and the backlight module, and is configured to receive an image signal captured by the image capturing unit to identify the object according to the image signal, control the transparent display panel to display information frame corresponding to an identifying result, and turn on/off the backlight module. An object identifying method for the electronic device is also provided.

Abstract: A semiconductor lighting module package includes a substrate, a lead frame located on the substrate, and a semiconductor lighting element. The lead frame has a carrier portion and a connecting portion spaced from the carrier portion. The semiconductor lighting element is electrically connected with the carrier portion and the connecting portion respectively. A plurality of nanoscale reflectors are formed on the carrier portion. A plurality of nanoscale reflectors are formed on the connecting portion. Shapes of the nanoscale reflectors formed on the carrier portion are different from shapes of the nanoscale reflectors formed on the connecting portion.

Abstract: A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors.

Abstract: A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together.

Abstract: A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together.

Abstract: An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation.

Abstract: An exemplary optical plate includes a base and an array of micro-structures. The base includes a first surface and a second surface opposite to the first surface. The micro-structures are provided at the first surface. Each micro-structure includes a base surface substantially coplanar with the first surface of the base and two side surfaces. The base surface has an approximately olive-shaped profile enclosed by two arc-outlines. The two side surfaces extend obliquely from the two arc-outlines and intersect at a ridge of the micro-structure.

Abstract: An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor layer and the p-type semiconductor layer. A second electrode is electrically connected with the other one of the n-type semiconductor layer and the p-type semiconductor layer. A bonding pad is formed on a top surface of the first electrode. A bonding wire is secured to the bonding pad. A ratio between a contacting area between the bonding pad and the top surface of the first electrode and an area of the top surface of the first electrode is no less than 6:10.

Abstract: An LED package structure includes an LED die, a lead frame and a housing connecting to the lead frame. The LED die is located on a surface of the lead frame. The housing includes an inner face surrounding the LED die. The inner face has a bottom edge connected to the surface of the lead frame, a top edge and a waist line between the bottom edge and top edge. The bottom edge surrounds an area less than an area surrounded by the waist line. The area surrounded by the waist line is less than an area surrounded by the top edge. The inner face has a curved surface between the waist line and the bottom edge.

Abstract: A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire electrically connects the chip to the lead frames. An encapsulation covers the lead frames, the heat dissipation plate, the semiconductor chip, and the conductive wires, while the bottom surface of the heat dissipation plate and the extending portions of the lead frames are exposed.

Abstract: A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.

Abstract: An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation.

Abstract: An LED includes a substrate, an LED chip setting on the substrate and a reflection cup surrounding the LED chip on the substrate. The LED chip electrically connects with two electrodes setting on the substrate. The reflection cup is filled with an encapsulating material. A fluorescent layer is formed by heating the encapsulating material and deposits on an end of the encapsulation away from the LED chip. The fluorescent layer is used for converting light from the LED chip into a specific wavelength.

Abstract: An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor layer and the p-type semiconductor layer. A second electrode is electrically connected with the other one of the n-type semiconductor layer and the p-type semiconductor layer. A bonding pad is formed on a top surface of the first electrode. A bonding wire is secured to the bonding pad. A ratio between a contacting area between the bonding pad and the top surface of the first electrode and an area of the top surface of the first electrode is no less than 6:10.

Abstract: A method for manufacturing an LED package includes following steps: providing a substrate, wherein the substrate includes a plurality of package carriers and each package carrier includes two lead frames. Each package carrier includes a first surface and a recession surrounded by a bottom wall and a sidewall is defined on the first surface. Mount an LED chip on the bottom wall and electrical connecting the LED chip and the two lead frames, form an encapsulation in the recession; form a hydrophobic layer on the package carrier and the encapsulation; cut the substrate into a plurality of LED package structure.

Abstract: A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors.