Patents by Inventor Kodai YAMAGISHI

Kodai YAMAGISHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
    Publication number: 20230392289
    Abstract: Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 ?m or less, as measured by a laser microscopy on the entire surface of the edge part.
    Type: Application
    Filed: October 7, 2021
    Publication date: December 7, 2023
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Kodai YAMAGISHI, Shunsuke OKA, Kenji SUZUKI
  • INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
    Publication number: 20230378274
    Abstract: Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing cracks in indium phosphide substrates caused by edge irregularities and processing damage. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a maximum height Sz of 2.1 ?m or less, as measured by a laser microscopy on the entire surface of the edge part.
    Type: Application
    Filed: October 7, 2021
    Publication date: November 23, 2023
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Kodai YAMAGISHI, Shunsuke OKA, Kenji SUZUKI