Abstract: In a terahertz wave generation apparatus including a first non-linear optical crystal 3 on which first laser L1 and second laser L2 from laser generation means 2 are incident to generate terahertz wave TH1, the laser generation means includes a second non-linear optical crystal 7 on which laser having the same wavelength as that of the second laser is incident to generate idler light L1 including a plurality of wavelengths, and makes the idler light L1 generated from the second non-linear optical crystal incident on the first non-linear optical crystal as the first laser L1, to generate terahertz wave including a plurality of wavelengths from the first non-linear optical crystal 3, and wavelength selection means including a transmission section which transmits an idler light having the specific wavelength in the idler light including the plurality of wavelengths can be provided, as needed.

Abstract: In a terahertz wave generation apparatus including a first non-linear optical crystal 3 on which first laser L1 and second laser L2 from laser generation means 2 are incident to generate terahertz wave TH1, the laser generation means includes a second non-linear optical crystal 7 on which laser having the same wavelength as that of the second laser is incident to generate idler light L1 including a plurality of wavelengths, and makes the idler light L1 generated from the second non-linear optical crystal incident on the first non-linear optical crystal as the first laser L1, to generate terahertz wave including a plurality of wavelengths from the first non-linear optical crystal 3, and wavelength selection means including a transmission section which transmits an idler light having the specific wavelength in the idler light including the plurality of wavelengths can be provided, as needed.

Abstract: An electromagnetic wave measurement device includes an electromagnetic wave outputter that outputs an electromagnetic wave having a frequency equal to or more than 0.01 THz and equal to or less than 100 THz toward a device under test. An electromagnetic wave detector detects the electromagnetic wave which has transmitted through the device under test. A relative position changer changes a relative position of an intersection of an optical path of the electromagnetic wave transmitting through the device under test and the device under test, with respect to the device under test, so that the intersection is at a predetermined relative position due to the refraction of the electromagnetic wave by the device under test. A characteristic value deriver derives a characteristic value of the electromagnetic wave based on a detection result of the electromagnetic wave detector, the characteristic value being associated with the predetermined relative position.

Abstract: An electromagnetic wave measurement device includes an electromagnetic wave outputter that outputs an electromagnetic wave having a frequency equal to or more than 0.01 THz and equal to or less than 100 THz toward a device under test. An electromagnetic wave detector detects the electromagnetic wave which has transmitted through the device under test. A relative position changer changes a relative position of an intersection of an optical path of the electromagnetic wave transmitting through the device under test and the device under test, with respect to the device under test, so that the intersection is at a predetermined relative position due to the refraction of the electromagnetic wave by the device under test. A characteristic value deriver derives a characteristic value of the electromagnetic wave based on a detection result of the electromagnetic wave detector, the characteristic value being associated with the predetermined relative position.

Abstract: A detector detects an electromagnetic wave having a frequency of 0.01 THz?f?100 THz and transmitted through a device under test (DUT). A changer changes a relative position of an intersection of an optical path of the electromagnetic wave and the DUT, with respect to the DUT. A deriver derives a characteristic value of the electromagnetic wave based on a detection result of the detector, while the characteristic value is associated with an assumed relative position, which is the relative position if the electromagnetic wave is not refracted by the DUT. A corrector changes the assumed relative position to an actual relative position, which is the relative position if the refraction of the electromagnetic wave by the DUT is considered. A corrected deriver derives the characteristic value associated with a predetermined relative position based on an output from the corrector.

Abstract: To provide a terahertz beam scanning apparatus and method that can scan a terahertz beam at high speed over a wide angle. The terahertz beam scanning apparatus includes: a laser device 12 that generates a first laser beam 1 and a second laser beam 2 having different wavelengths; a laser optical system 14 that focuses the first laser beam 1 and the second laser beam 2 on a same common focal point 14b; and a terahertz generator 16 that is located at the common focal point and generates a terahertz beam 4 by difference frequency mixing. The laser optical system 14 is configured to be capable of changing a relative incidence ?i between the first laser beam and the second laser beam to the terahertz generator.

Abstract: A filter 2 for collecting PMs, a microwave transmitter 30 for emitting electromagnetic waves whose frequency is dozens of GHz-a few of THz onto the filter 2, a microwave receiver 31 for detecting an intensity of the electromagnetic waves that have transmitted through the filter 2, and a computing means for computing a collection amount of PMs from the intensity that has been detected with the microwave receiver 31 are included. Since it is possible to detect the distribution of the collection amount of PMs with good accuracy, it is possible to carry out a recycling process in a state where the collection amount does not become too much, and thereby it is possible to make a reducing-agent supply amount into exhaust gases minimum at the time of the recycling process.

Abstract: To provide a terahertz beam scanning apparatus and method that can scan a terahertz beam at high speed over a wide angle. The terahertz beam scanning apparatus includes: a laser device 12 that generates a first laser beam 1 and a second laser beam 2 having different wavelengths; a laser optical system 14 that focuses the first laser beam 1 and the second laser beam 2 on a same common focal point 14b; and a terahertz generator 16 that is located at the common focal point and generates a terahertz beam 4 by difference frequency mixing. The laser optical system 14 is configured to be capable of changing a relative incidence ?i between the first laser beam and the second laser beam to the terahertz generator.

Abstract: A container according to the present invention contains at least a part of a device under test to be measured by a terahertz wave measurement device. The container includes a gap portion that internally disposes at least a part of the device under test, and an enclosure portion that includes a first flat surface portion and a second flat surface portion, and disposes the gap portion between the first flat surface portion and the second flat surface portion, thereby enclosing the gap portion. Moreover, a relationship n1?0.1?n2?n1+0.1 holds where n2 denotes a refractive index of the enclosure portion, and n1 denotes a refractive index of the device under test. Further, the first flat surface portion intersects at the right angle with a travel direction of the terahertz wave.

Abstract: According to the electromagnetic wave measurement device of the present invention, an electromagnetic wave output device outputs an electromagnetic wave having a frequency equal to or more than 0.01 [THz] and equal to or less than 100 [THz] toward a device under test. An electromagnetic wave detector detects the electromagnetic wave which has transmitted through the device under test. A relative position changing unit changes a relative position of an intersection across which an optical path of the electromagnetic wave transmitting through the device under test and the device under test intersect with respect to the device under test. A characteristic value deriving unit derives a characteristic value of the electromagnetic wave based on a detection result of the electromagnetic wave detector while the characteristic value is associated with an assumed relative position which is the relative position if it is assumed that the electromagnetic wave is not refracted by the device under test.

Abstract: A filter 2 for collecting PMs, a microwave transmitter 30 for emitting electromagnetic waves whose frequency is dozens of GHz-a few of THz onto the filter 2, a microwave receiver 31 for detecting an intensity of the electromagnetic waves that have transmitted through the filter 2, and a computing means for computing a collection amount of PMs from the intensity that has been detected with the microwave receiver 31 are included. Since it is possible to detect the distribution of the collection amount of PMs with good accuracy, it is possible to carry out a recycling process in a state where the collection amount does not become too much, and thereby it is possible to make a reducing-agent supply amount into exhaust gases minimum at the time of the recycling process.

Abstract: A method includes a spectroscopic measurement step of pre-measuring a spectrum [S] of tera-hertz wave absorbencies of a target component for a plurality of frequencies ranging about from 1 THz to 3 THz, and an object spectroscopic step of irradiating an object with tera-hertz waves of the plurality of frequencies to measure absorbencies I of the object. Presence and absence of the target component in the object is determined on the basis of the spectrum [S] of the absorbancy S and the spectrum [I] of the absorbancy I of the object.

Abstract: An apparatus for detecting materials includes a database for storing detecting spectra of detecting materials, and a tera-hertz wave applying unit for applying tera-hertz waves having a plurality of different frequencies around a boundary between a light wave frequency and a radio wave frequency, to a predetermined position of an inspecting object. The apparatus includes an output wave receiving unit for receiving an output wave that is the tera-hertz wave having been applied to the inspecting object, and a determining unit for determining whether or not the output wave includes the detecting spectrum.

Abstract: There is disclosed an apparatus comprising: a terahertz wave generation device which generates a terahertz wave; a terahertz wave irradiation device which irradiates an object to be inspected with the terahertz wave; and a scattering intensity detection device which cuts a rectilinear wave of the terahertz wave which has passed through the object to be inspected and which detects an intensity of a scattered wave, and a scattered material such as powder or foam contained in an envelope, a capsule, a container or the like is detected in a non-destructive manner without unsealing the envelope or the like.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: A method includes a spectroscopic measurement step of pre-measuring a spectrum [S] of tera-hertz wave absorbencies of a target component for a plurality of frequencies ranging about from 1 THz to 3 THz, and an object spectroscopic step of irradiating an object with tera-hertz-waves of the plurality of frequencies to measure absorbencies I of the object. Presence and absence of the target component in the object is determined on the basis of the spectrum [S] of the absorbancy S and the spectrum [I] of the absorbancy I of the object.

Abstract: There is disclosed an apparatus comprising: a terahertz wave generation device which generates a terahertz wave; a terahertz wave irradiation device which irradiates an object to be inspected with the terahertz wave; and a scattering intensity detection device which cuts a rectilinear wave of the terahertz wave which has passed through the object to be inspected and which detects an intensity of a scattered wave, and a scattered material such as powder or foam contained in an envelope, a capsule, a container or the like is detected in a non-destructive manner without unsealing the envelope or the like.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: An apparatus that inspects wire breaking of a semiconductor integrated circuit includes a voltage applying device (12), a light pulse source (14), a scanning device (16), an electromagnetic wave detection device (18), and a wire breaking detection device (20). The voltage applying device (12) maintains a semiconductor integrated circuit in a state where a predetermined voltage is being applied thereto. The light pulse source (14) generates an ultrashort light pulse (2). The scanning device (16) two-dimensionally scans and irradiates the two-dimensional circuit of the semiconductor integrated circuit by using the ultrashort light pulse (2). The electromagnetic wave detection device (18) detects an electromagnetic wave (3) radiated from a position irradiated with the ultrashort light pulse on the semiconductor integrated circuit. The wire breaking detection device (20) detects wire breaking of the irradiated position based on presence and absence or intensity of the electromagnetic wave.

Abstract: There are disclosed a nonlinear optical crystal 1 which can generate a THz wave by a parametric effect; a pump light incidence apparatus 12 for allowing a pump light 2 to be incident upon the nonlinear optical crystal; and a seed light injection apparatus 14 for injecting a seed light 5 having a variable frequency in a generation direction of an idler light 3 generated by the pump light. The seed light injection apparatus 14 comprises angle dispersion compensation means 16 set so that an incidence angle ?IN of the seed light upon the nonlinear optical crystal 1 substantially equals to a desired phase matching condition regardless of a wavelength.