Abstract: The disclosure is related to a lithographic mask for EUV lithography, to a method for producing the mask, to a method for printing a pattern with the mask, to a stepper/scanner configured to print a pattern with the mask as well as to a computer-implemented method for calculating a deformation of the pattern. The mask comprises an absorber pattern, which is intentionally deformed in the 2-dimensional plane of the EUV mask, with respect to the intended pattern. The deformation of the pattern is based on a previous measurement of the location of multilayer defects on the blank, and calculated so that in the deformed pattern, a maximum of multilayer defects are covered by absorber material. When the pattern is subsequently printed on a semiconductor wafer in a stepper/scanner, the scanner operation is modulated so that the pattern deformation is not reproduced on the wafer.

Abstract: The disclosure is related to a lithographic mask for EUV lithography, to a method for producing the mask, to a method for printing a pattern with the mask, to a stepper/scanner configured to print a pattern with the mask as well as to a computer-implemented method for calculating a deformation of the pattern. The mask comprises an absorber pattern, which is intentionally deformed in the 2-dimensional plane of the EUV mask, with respect to the intended pattern. The deformation of the pattern is based on a previous measurement of the location of multilayer defects on the blank, and calculated so that in the deformed pattern, a maximum of multilayer defects are covered by absorber material. When the pattern is subsequently printed on a semiconductor wafer in a stepper/scanner, the scanner operation is modulated so that the pattern deformation is not reproduced on the wafer.

Abstract: The invention relates to a liquid crystal device, comprising an antiferroelectric liquid crystal material (AFLC material) having smectic layers, and two substrates confining the AFLC material therebetween, wherein the AFLC material is uniaxial negative. Preferably, the AFLC material is uniaxial as a consequence of a surface stabilization and of a selected smectic tilt angle ? of the AFLC material. Preferably, the angle ? is in the range of 40°???50°, especially 45°. The invention also relates to electrooptic liquid crystal devices.

Abstract: The invention relates to a liquid crystal device, comprising an antiferroelectric liquid crystal material (AFLC material) having smectic layers, and two substrates confining said AFLC material therebetween, wherein said AFLC material is uniaxial negative. Preferably, the AFLC material is uniaxial as a consequence of a surface stabilization and of a selected smectic tilt angle &thgr; of said AFLC material. Preferably, said angle &thgr; is in the range of 40°<&thgr;<50°, especially 45°. The invention also relates to electrooptic liquid crystal devices.