Abstract: A cyclic capillary electrophoresis device includes a capillary channel that forms a closed loop. The capillary channel comprises an inner half facing toward a space enclosed by the loop, where the inner half having an inner wall of first charge density, and an outer half facing away from the space enclosed by the loop, where the outer half having an inner wall surface of second charge density. A difference between the first and the second charge densities exists or can be turned on. The difference is configured to create a smaller average electroosmotic flow velocity in the inner half than in the outer half.

Abstract: The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO3 (STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

Abstract: The current disclosure relates to methods and systems for detecting a target molecule in a sample by using identification molecules linked to assay molecules, wherein the assay molecules bind the target, and where the identification molecules are isolated from the sample and run through a nanopore sensor for detecting the target molecule.

Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.

Abstract: A sensor is provided, the sensor including a field effect transistor comprising: (a) an active region comprising: (i) a source region and a drain region defining a source-drain axis and (ii) a channel region between the source region and the drain region; (b) a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and (c) a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor, a method for using such a sensor, and a process for making such a sensor are also provided.

Abstract: A device and a method for performing an assay is provided. The assay device, which may be used for determining the concentration of an analyte in a sample, includes a plurality of microchambers and a Field-effect transistor (FET) arranged at the bottom of each of the plurality of microchambers. Capture probe molecules for the analyte can be arranged within the plurality of microchambers such that each microchamber contains at most one capture probe molecule. The FET can be arranged in said microchamber to give a readable output signal based on binding of the analyte, or competitor to the analyte, with the capture probe molecule.

Abstract: The current invention relates to a load binder comprising an axially extending elongate, preferably tubular, member, two shanks, a first and second ratchet wheel, a first and second oscillatory handle; said member comprising end portions comprising inner screw threads in relatively opposite directions so as to accommodate said shanks which are correspondingly screw-threaded and which comprise distal ends, preferably eyes; whereby rotation of the member in one direction causes the distal ends to draw together and rotation of the member in relatively opposite direction causes the distal ends to spread apart; whereby said rotation of said member is effected by a ratchet mechanism which involves the provision of said first and said second ratchet wheel which are suitably secured intermediate the ends of the member and are rotatably mounted between mutually spaced first side members which project from said first and second handle.

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

Abstract: The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO3 (STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.

Abstract: A cyclic capillary electrophoresis device includes a capillary channel that forms a closed loop. The capillary channel comprises an inner half facing toward a space enclosed by the loop, where the inner half having an inner wall of first charge density, and an outer half facing away from the space enclosed by the loop, where the outer half having an inner wall surface of second charge density. A difference between the first and the second charge densities exists or can be turned on. The difference is configured to create a smaller average electroosmotic flow velocity in the inner half than in the outer half.

Abstract: The current invention relates to a load binder comprising an axially extending elongate, preferably tubular, member, two shanks, a first and second ratchet wheel, a first and second oscillatory handle; said member comprising end portions comprising inner screw threads in relatively opposite directions so as to accommodate said shanks which are correspondingly screw-threaded and which comprise distal ends, preferably eyes; whereby rotation of the member in one direction causes the distal ends to draw together and rotation of the member in relatively opposite direction causes the distal ends to spread apart; whereby said rotation of said member is effected by a ratchet mechanism which involves the provision of said first and said second ratchet wheel which are suitably secured intermediate the ends of the member and are rotatably mounted between mutually spaced first side members which project from said first and second handle.

Abstract: Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.

Abstract: A method for sequencing a template polynucleotide, comprising the steps of: a) Providing a sensor comprising: an active region comprising a source region, a drain region, and a channel region, a dielectric region on the channel region, a polymerase coupled to the dielectric region, the polymerase having an active site, the polymerase being separated from the dielectric region by a gap, one or more sensitizing means, a fluidic gate region to which the polymerase is exposed, a template polynucleotide bound to a primer, the template polynucleotide being bound to the polymerase; b) Exposing the polymerase to one or more nucleotide polyphosphates; and c) Electrically monitoring changes in the channel region electrical properties.

Abstract: A device and a method for performing an assay is provided. The assay device, which may be used for determining the concentration of an analyte in a sample, includes a plurality of microchambers and a Field-effect transistor (FET) arranged at the bottom of each of the plurality of microchambers. Capture probe molecules for the analyte can be arranged within the plurality of microchambers such that each microchamber contains at most one capture probe molecule. The FET can be arranged in said microchamber to give a readable output signal based on binding of the analyte, or competitor to the analyte, with the capture probe molecule.

Abstract: A sensor is provided. The sensor includes a field effect transistor comprising: an active region comprising a source region, a drain region, and a channel region between the source region and the drain region; a dielectric region on the channel region; an enzyme coupled to the dielectric region, the enzyme having an active site for interacting with a substrate; an electrolyte-screening layer coupled to the dielectric region, covering part of the enzyme while leaving the active site uncovered, thereby permitting interaction of the substrate with the active site, and a fluidic gate region to which the active site of the enzyme is exposed. A biosensing device including one or more of the sensors is also provided.

Abstract: A sensor is provided, the sensor including a field effect transistor comprising: (a) an active region comprising: (i) a source region and a drain region defining a source-drain axis and (ii) a channel region between the source region and the drain region; (b) a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and (c) a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor, a method for using such a sensor, and a process for making such a sensor are also provided.

Abstract: Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.

Abstract: The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.