Abstract: Embodiments related to burst mode amplifying are described and depicted.

Abstract: A disclosed circuit arrangement may include a power detector. A multiplexer circuit may be coupled to the power detector. The multiplexer circuit may include at least two switching sections, one of the switching sections to pass a radio frequency (RF) signal generated based on a first modulation scheme to the power detector and another of the switching sections to pass an RF signal generated based on a second modulation scheme to the power detector.

Abstract: Semiconductor device having an amplifier. In one embodiment, the amplifier includes a first amplifier path including a first input and a second amplifier path including a second input. An inductance having a connectable node is connected between the first and second inputs, the connectable node being symmetrically connected between the first and second inputs. At least one ESD protection structure is connected to the connectable node. In one embodiment, the semiconductor device is used in a communications device.

Abstract: One embodiment relates to a power amplifier that includes a switched mode power amplification stage. The power amplification stage has an output configured to provide an amplified output voltage as a function of a drive signal, where the drive signal fluctuates during a first time and is inactive during a second time. The power amplifier also includes impedance compensation circuitry coupled to the output of the power amplification stage. The impedance compensation circuitry can selectively alter an output impedance of the power amplification stage as a function of a control signal that is continuously de-asserted during the first time and continuously asserted during the second time. Other embodiments are also disclosed.

Abstract: Transformers and methods of manufacture thereof are disclosed. In one embodiment, a transformer includes a semiconductor workpiece and a packaging system disposed over the semiconductor workpiece. The packaging system includes a redistribution layer. At least a portion of at least one winding of the transformer is disposed in the redistribution layer of the packaging system.

Abstract: Embodiments related to burst mode amplifying are described and depicted.

Abstract: One embodiment relates to a power amplifier that includes a switched mode power amplification stage. The power amplification stage has an output configured to provide an amplified output voltage as a function of a drive signal, where the drive signal fluctuates during a first time and is inactive during a second time. The power amplifier also includes impedance compensation circuitry coupled to the output of the power amplification stage. The impedance compensation circuitry can selectively alter an output impedance of the power amplification stage as a function of a control signal that is continuously de-asserted during the first time and continuously asserted during the second time. Other embodiments are also disclosed.

Abstract: Implementations related to systems and devices that make use of a power detector multiplexer are presented herein.

Abstract: Implementations related to systems and devices that make use of a power detector multiplexer are presented herein.

Abstract: Semiconductor device having an amplifier. In one embodiment, the amplifier includes a first amplifier path including a first input and a second amplifier path including a second input. An inductance having a connectable node is connected between the first and second inputs, the connectable node being symmetrically connected between the first and second inputs. At least one ESD protection structure is connected to the connectable node. In one embodiment, the semiconductor device is used in a communications device.