Abstract: In a lithographic apparatus, an illumination mode is set using a field mirror comprising a plurality of movable facets to direct radiation to selectable positions on a pupil facet mirror. In the event that a field facet mirror is defective and cannot be set to a desired position, another of the movable facet mirrors is set to a corrective position, different than its desired position, to at least partially ameliorate a deleterious effect of the defective facet mirror.

Abstract: An illumination system of a lithographic apparatus includes a plurality of reflective elements arranged to receive radiation from a radiation source, the reflective elements being movable between different orientations. In the different orientations, the reflective elements direct radiation towards different locations at a reflective component in a pupil plane of the illumination system, thereby forming different illumination modes. Each reflective element is moveable between a first orientation, which directs radiation towards a first location the pupil plane, and a second orientation, which directs radiation towards a second location in the pupil plane. The first orientation and the second orientation of the reflective element are defined by end stops.

Abstract: In a lithographic apparatus, an illumination mode is set using a field mirror that includes a plurality of movable facets to direct radiation to selectable positions on a pupil facet mirror. A base illumination mode is selected from a set of predetermined illumination modes and the movable facets are set to effect that mode. In order to adjust an imaging parameter, a fraction of the movable facets are set to different positions. The determination of which facets to set to different positions is based on summing the effects of setting each facet to a different position.

Abstract: Improved complementary phase shift mask (c:PSM) imaging techniques are described, including a method in which scattering bars are provided on the trim mask in order to allow better CD uniformity to be achieved in the double exposure process. The number, size and position of the scattering bars can be optimised to achieve a desired isofocal CD and/or a desired level of sensitivity of the CD to trim exposure energy used in the second exposure step of the c:PSM process. The trim exposure dose can be regulated, and/or the trim width used on the trim mask can be optimised, to compensate for iso-dense bias so as to achieve optical proximity correction.

Abstract: In a lithographic apparatus, an illumination mode is set using a field mirror that includes a plurality of movable facets to direct radiation to selectable positions on a pupil facet mirror. A base illumination mode is selected from a set of predetermined illumination modes and the movable facets are set to effect that mode. In order to adjust an imaging parameter, a fraction of the movable facets are set to different positions. The determination of which facets to set to different positions is based on summing the effects of setting each facet to a different position.

Abstract: In a lithographic apparatus, an illumination mode is set using a field mirror comprising a plurality of movable facets to direct radiation to selectable positions on a pupil facet mirror. In the event that a field facet mirror is defective and cannot be set to a desired position, another of the movable facet mirrors is set to a corrective position, different than its desired position, to at least partially ameliorate a deleterious effect of the defective facet mirror.

Abstract: An illumination system of a lithographic apparatus includes a plurality of reflective elements arranged to receive radiation from a radiation source, the reflective elements being movable between different orientations. In the different orientations, the reflective elements direct radiation towards different locations at a reflective component in a pupil plane of the illumination system, thereby forming different illumination modes. Each reflective element is moveable between a first orientation, which directs radiation towards a first location the pupil plane, and a second orientation, which directs radiation towards a second location in the pupil plane. The first orientation and the second orientation of the reflective element are defined by end stops.

Abstract: An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

Abstract: A lithographic apparatus includes an illuminator configured to condition a beam of radiation and a support configured to hold a patterning device. The patterning device is configured to pattern the beam of radiation according to a desired pattern. The lithographic apparatus also includes a substrate table configured to hold a substrate and a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate. The apparatus further includes a sensor configured and arranged to intercept a portion of the beam and to measure a transmission of the beam through at least a portion of the patterning device.

Abstract: A double patterning process for printing dense lines is provided. In a first step, a first semi dense pattern of lines is printed in a first resist material layer overlaying a substrate provided with a bottom anti-reflection coating. In a second step, a second semi dense pattern of lines is printed in a second resist material layer provided over the cleared area. The first and second semi dense line patterns are positioned in interleaved position, to provide a desired dense pattern of lines and spaces. After development of the first resist material and before providing the second resist material to the substrate, a surface conditioning of the bottom anti-reflection coating is applied to the cleared area between lines of first resist material. The surface conditioning step is arranged to improve adhesion of a feature of second resist material to the surface of the cleared area.

Abstract: An immersion lithographic apparatus provides an immersion liquid including photosensitive material(s) configured to form a patterned film on the surface of a substrate on exposure to a radiation beam. Irradiation through the immersion liquid onto a substrate leads to deposition of a film on the substrate. Film formation occurs only in the photoirradiated region, so that the film formed has a pattern corresponding to the pattern of the radiation.

Abstract: An immersion lithographic apparatus provides an immersion liquid including photosensitive material(s) configured to form a patterned film on the surface of a substrate on exposure to a radiation beam. Irradiation through the immersion liquid onto a substrate leads to deposition of a film on the substrate. Film formation occurs only in the photoirradiated region, so that the film formed has a pattern corresponding to the pattern of the radiation.

Abstract: A transport unit transfers a substrate between a chamber enclosing a substrate table and a processing unit that process a substrate before and after exposure in a substantially contaminant free environment to minimize the exposure of the resist on the substrate to the contaminants.

Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z5 astigmatism, Z9 spherical, and Z12 astigmatism.

Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z5 astigmatism, Z9 spherical, and Z12 astigmatism.

Abstract: A transport unit transfers a substrate between a chamber enclosing a substrate table and a processing unit that process a substrate before and after exposure in a substantially contaminant free environment to minimize the exposure of the resist on the substrate to the contaminants.