Abstract: A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

Abstract: A first voltage is applied to a first positive electrode and a first negative electrode of an attraction plate in a lying posture to attract a dielectric object to be attracted on the attraction plate. The attraction plate is turned to a stand posture while attracting the dielectric object by a gradient force, and a conductive thin film is grown while applying a second voltage to a second positive electrode and a second negative electrode to generate an electrostatic force. Since the object is continuously attracted, the attraction plate will not detach. After having started attraction by electrostatic force, introduction of heat medium gas between the object and the attraction plate allows for temperature control of the object.

Abstract: A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.

Abstract: A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.

Abstract: A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device.

Abstract: A multi-stepped substrate having a plurality of steps is produced by forming, on the principal surface of a substrate, a plurality of masks which are put on top of each other, which differ from each other in the materials used for forming them and which are likewise different, from each other, in the means for peeling off the same; and that the substrate is subjected, in order, to dry-etching operations through the plurality of masks each having a desired shape such that the substrate has a plurality of steps each of which reflects the shape of each corresponding mask.

Abstract: An electrostatic chuck for attracting an insulative substrate to be processed, the electrostatic chuck comprising a dielectric layer having a first surface which attracts an insulative substrate, and a second surface on which are provided a plurality of electrodes, and an insulative support base plate fixing said dielectric layer. A distance between adjacent ones of the electrodes and the thickness of the dielectric layer are adjusted such that when a potential difference is established between the electrodes, a non-uniform electric field is formed in which the insulative substrate is partially polarized and attracted to the first surface by gradient force.

Abstract: An electrostatic chuck for attracting an insulative substrate to be processed, the electrostatic chuck comprising a dielectric layer having a first surface which attracts an insulative substrate, and a second surface on which are provided a plurality of electrodes, and an insulative support base plate fixing said dielectric layer. A distance between adjacent ones of the electrodes and the thickness of the dielectric layer are adjusted such that when a potential difference is established between the electrodes, a non-uniform electric field is formed in which the insulative substrate is partially polarized and attracted to the first surface by gradient force.

Abstract: A chuck equipment which can hold insulating substrates is provided. First and second electrodes are provided to be exposed on the base the surface of which is insulated. The insulating substrate is placed in contact with or in close proximity to the surfaces of the first and second electrodes. Since an electric field having a high rate of spatial change is established between the first and second electrodes, the substrate is held against the surface of the chuck equipment by the gradient force. Since the magnitude of the gradient force depends on that of the rate of change of the electric field, a voltage may be applied between the first and second electrodes to establish an electric field of 1.0×106V/m or greater.

Abstract: According to the present invention, there is provided an electrostatic chuck for electrostatically attracting an insulative substrate, an apparatus for heating/cooling an insulative substrate using the electrostatic chuck, and a method for controlling the temperature of an insulative substrate. The shape and the properties of the dielectric, and the shape of the electrodes, which form the electrostatic chuck, are disclosed. Also the apparatus for heating/cooling an insulative substrate comprising a plate, a gas supply conduit and a temperature controlling system, and the apparatus for processing an insulative substrate in which the apparatus for heating/cooling an insulative substrate is installed are disclosed.

Abstract: A chuck equipment which can hold insulating substrates is provided. First and second electrodes are provided to be exposed on the base the surface of which is insulated. The insulating substrate is placed in contact with or in close proximity to the surfaces of the first and second electrodes. Since an electric field having a high rate of spatial change is established between the first and second electrodes, the substrate is held against the surface of the chuck equipment by the gradient force. Since the magnitude of the gradient force depends on that of the rate of change of the electric field, a voltage may be applied between the first and second electrodes to establish an electric field of 1.0×106 V/m or greater.