Patents by Inventor Koh Matsumoto

Koh Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120160170
    Abstract: Disclosed is a rotation/revolution type vapor phase growth apparatus that can maintain constant flow rates of a purge gas and a raw material gas when a raw material gas introducing direction is set to be the same as a susceptor rotation introducing direction. Inside a hollow drive shaft 12 supporting and rotating a disk-shaped susceptor 13, a raw material gas supply tube 20 is coaxially disposed, and between the hollow drive shaft and the raw material gas supply tube, a purge gas flow path 21 is formed. Additionally, in a purge gas introducing nozzle introducing a purge gas in an outer circumferential direction of a flow channel 18 from the purge gas flow path, a gas introducing path 19c is formed in a direction parallel to an upper surface of the susceptor in such a manner as to make a vertical dimension of the gas introducing path constant.
    Type: Application
    Filed: July 12, 2010
    Publication date: June 28, 2012
    Applicant: TAIYO NIPPON SANSO CORPORATION
    Inventors: Akira Yamaguchi, Koh Matsumoto, Kosuke Uchiyama
  • Patent number: 6800855
    Abstract: The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: October 5, 2004
    Assignee: Nippon Sanso Corporation
    Inventors: Jie Dong, Katsumasa Suzuki, Hiroshi Masusaki, Koh Matsumoto
  • Patent number: 6636316
    Abstract: The present invention provides a spectroscopic method for analysing objects in a gas comprising a main ingredient and the objects, both of which the absorption spectra exist in the same wavelength range, with high precision and sensitivity by using a compact and simple single cell system.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: October 21, 2003
    Assignee: Nippon Sanso Corporation
    Inventors: Koh Matsumoto, Jie Dong, Hiroshi Masusaki, Katsumasa Suzuki
  • Patent number: 6434496
    Abstract: The present invention provides a method and an apparatus for measuring a light absorption spectra which can remove a noise included in a measurement signal, and achieve a high sensitivity of a laser spectral in a good S/N ratio. According to the present invention, there is provided a method for measuring a light absorption spectra comprising the steps of: (i) conducting a Fourier transform of an absorption spectra measured by using a laser beam source; (ii) disassembling in a Fourier space the Fourier transformed signal into a signal resulted from a periodic vibration component and a signal resulted from a molecular absorption spectra; (iii) removing the Fourier component resulted from said periodic vibration component in a Fourier space; and (iv) conducting an inverse Fourier transform on the signal from which said periodic vibration component is removed, whereby reproducing an absorption spectra in a real space.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: August 13, 2002
    Assignee: Nippon Sanso Corporation
    Inventors: Jie Dong, Koh Matsumoto
  • Patent number: 6375911
    Abstract: A process and an apparatus for treating an exhaust gas, in which a raw gas and high-boiling intermediate products contained in the exhaust gas let out from a CVD system employing a silicon-containing gas is brought into contact with a transition metal such as nickel or a silicide of such transition metals to decompose or convert them into stable halides, followed by detoxication treatment of the harmful components contained in the exhaust gas.
    Type: Grant
    Filed: August 13, 1999
    Date of Patent: April 23, 2002
    Assignee: Nippon Sanso Corporation
    Inventors: Tadahiro Ohmi, Yoshio Ishihara, Koh Matsumoto, Tetsuya Kimijima
  • Patent number: 6190457
    Abstract: Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11.
    Type: Grant
    Filed: November 21, 1997
    Date of Patent: February 20, 2001
    Assignee: Nippon Sanso Corporation
    Inventors: Takayuki Arai, Junichi Hidaka, Koh Matsumoto, Nakao Akutsu, Kazuhiro Aoyama, Yoshiaki Inaishi, Ichitaro Waki
  • Patent number: 5821537
    Abstract: A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by a pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak.
    Type: Grant
    Filed: July 2, 1997
    Date of Patent: October 13, 1998
    Assignee: Nippon Sanso Corporation
    Inventors: Yoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto
  • Patent number: 5766321
    Abstract: Disclosed is a dissolved oxygen reducing apparatus which enables supplying a liquid containing very small amounts of dissolved oxygen. The dissolved oxygen reducing apparatus includes a bubbling vessel (24) having a liquid charge inlet (21), a liquid discharge outlet (22) and an inert gas discharge port (23), an inert gas sparger (25) provided within the bubbling vessel (24), and a liquid discharge pipe (26) connected to the liquid discharge outlet (22). The bubbling vessel (24) and the liquid discharge pipe (26) have a coefficient of oxygen permeability of not higher than 10.sup.-9 cc.multidot.cm/cm.sup.2 .multidot.sec.multidot.atm at 25.degree. C.
    Type: Grant
    Filed: December 12, 1994
    Date of Patent: June 16, 1998
    Assignee: Nippon Sanso Corporation
    Inventors: Yoshio Ishihara, Hiroshi Yamazaki, Sumiyo Yamane, Koh Matsumoto
  • Patent number: 5703365
    Abstract: The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak.
    Type: Grant
    Filed: November 20, 1995
    Date of Patent: December 30, 1997
    Assignee: Nippon Sanso Corporation
    Inventors: Yoshio Ishihara, Hiroshi Masusaki, Shang-Qian Wu, Koh Matsumoto