Patents by Inventor Kohei AIDA

Kohei AIDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200295180
    Abstract: According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 17, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Electronic Devices & Storage Corporation
    Inventors: Kentaro ICHINOSEKI, Tatsuya NISHIWAKI, Kikuo AIDA, Kohei OASA
  • Patent number: 10763352
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having first and second surfaces and an impurity concentration distribution in a first direction from the second surface to the first surface, a first semiconductor region of a second conductivity between the semiconductor layer and the first surface, a second semiconductor region of a first conductivity type between the first semiconductor region and the first surface side, a first trench extending from the first surface into the semiconductor layer, a first electrode located in the first trench over a first insulating film and spaced from the first semiconductor region by a first insulating film, a second electrode located in the first trench over a second insulating film, a second trench extending from the first surface into the semiconductor layer and surrounding the first trench, and a third electrode located in the second trench over a third insulating film.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: September 1, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Hiroshi Matsuba, Hung Hung, Tatsuya Nishiwaki, Kohei Oasa, Kikuo Aida
  • Patent number: 10707312
    Abstract: According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate, a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies, a gate adjacent to the base layer with a gate insulating film therebetween, a source layer connected to the base layer, and a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: July 7, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Hiroshi Matsuba, Hung Hung, Tatsuya Nishiwaki, Kikuo Aida, Kohei Oasa
  • Publication number: 20200152785
    Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·?m·cm?3])/(density of the first metal material [g·cm?3]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·m·cm?3])/(density of the second metal material [g·cm?3]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode pro
    Type: Application
    Filed: August 5, 2019
    Publication date: May 14, 2020
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Tatsuya OHGURO, Tatsuya NISHIWAKI, Hideharu KOJIMA, Yoshiharu TAKADA, Kikuo AIDA, Kentaro ICHINOSEKI, Kohei OASA, Shingo SATO
  • Patent number: 10651276
    Abstract: A semiconductor device has a cell which includes a first semiconductor region of a first conductive type, a base region of a second conductive type on the first semiconductor region, a source region of the first conductive type on the base region, a gate electrode penetrating through the base region in a first direction to reach the first semiconductor region and extending in a second direction, and a gate insulting film between the gate electrode and the first semiconductor region, between the gate electrode and the base region, and between the gate electrode and the source region. The cell has a region having a first threshold voltage and a region having a second threshold voltage higher than the first threshold voltage.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: May 12, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Tatsuya Nishiwaki, Kohei Oasa, Hiroshi Matsuba, Hung Hung, Kikuo Aida, Kentaro Ichinoseki
  • Patent number: 10593793
    Abstract: A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: March 17, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Tatsuya Nishiwaki, Kohei Oasa, Hiroshi Matsuba, Kikuo Aida, Hung Hung
  • Publication number: 20190296116
    Abstract: According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate, a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies, a gate adjacent to the base layer with a gate insulating film therebetween, a source layer connected to the base layer, and a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 26, 2019
    Inventors: Hiroshi MATSUBA, Hung HUNG, Tatsuya NISHIWAKI, Kikuo AIDA, Kohei OASA
  • Publication number: 20190288071
    Abstract: A semiconductor device has a cell which includes a first semiconductor region of a first conductive type, a base region of a second conductive type on the first semiconductor region, a source region of the first conductive type on the base region, a gate electrode penetrating through the base region in a first direction to reach the first semiconductor region and extending in a second direction, and a gate insulting film between the gate electrode and the first semiconductor region, between the gate electrode and the base region, and between the gate electrode and the source region. The cell has a region having a first threshold voltage and a region having a second threshold voltage higher than the first threshold voltage.
    Type: Application
    Filed: September 12, 2018
    Publication date: September 19, 2019
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Tatsuya NISHIWAKI, Kohei OASA, Hiroshi MATSUBA, Hung HUNG, Kikuo AIDA, Kentaro ICHINOSEKI
  • Publication number: 20190288103
    Abstract: A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.
    Type: Application
    Filed: September 10, 2018
    Publication date: September 19, 2019
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Tatsuya NISHIWAKI, Kohei OASA, Hiroshi MATSUBA, Kikuo AIDA, Hung HUNG
  • Publication number: 20190259871
    Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having first and second surfaces and an impurity concentration distribution in a first direction from the second surface to the first surface, a first semiconductor region of a second conductivity between the semiconductor layer and the first surface, a second semiconductor region of a first conductivity type between the first semiconductor region and the first surface side, a first trench extending from the first surface into the semiconductor layer, a first electrode located in the first trench over a first insulating film and spaced from the first semiconductor region by a first insulating film, a second electrode located in the first trench over a second insulating film, a second trench extending from the first surface into the semiconductor layer and surrounding the first trench, and a third electrode located in the second trench over a third insulating film.
    Type: Application
    Filed: August 31, 2018
    Publication date: August 22, 2019
    Inventors: Hiroshi MATSUBA, Hung HUNG, Tatsuya NISHIWAKI, Kohei OASA, Kikuo AIDA
  • Publication number: 20110131397
    Abstract: A multiprocessor system includes a memory that stores a program; an address notification register; a first processor; and a second processor, in which the first processor stores address information indicating an address from which the program is executed in the address notification register, when the first processor notifies an interrupt request to the second processor and causes the second processor to execute the program, and the second processor obtains the interrupt request notified from the first processor and the address information stored in the address notification register, and starts to execute the program from the address indicated by the obtained address information.
    Type: Application
    Filed: November 30, 2010
    Publication date: June 2, 2011
    Applicant: NEC Electronics Corporation
    Inventor: Kohei AIDA