Abstract: A superfinishing method for a bearing roller involves installation of a pair of parallel feed drums. The feed drums have guide thread surfaces each continuing in a spiral shape on an outer periphery, and each being driven to rotate about respective center axes. The feed drums through-feed a workpiece to be formed into a bearing roller while supporting and rotating the workpiece with the guide thread surfaces opposed to each other. The superfinishing method includes using a grinder to process an outer peripheral surface of the workpiece passing between the feed drums, varying a thread bottom angle of the guide thread surface based on positions along the feed drums in an axial direction, and superfinishing straight and logarithmic portions at both ends of the straight portion of a rolling surface of the bearing roller by one through-feed of the workpiece passing between the feed drums.

Abstract: An object of the present invention is to provide a method for producing an electroconductive laminate, which is capable of forming a metal layer having low resistance at a position corresponding to a patterned plated layer, a laminate, and an electroconductive laminate.

Abstract: According to the invention, there are provided a conductive film which has a mesh-like metal layer composed of metal thin wires and in which visual recognition of the metal thin wires is suppressed and the metal layer has excellent conductive characteristics, a touch panel sensor, and a touch panel. A conductive film according to the invention includes a substrate; a patterned to-be-plated layer which is disposed on the substrate in a mesh pattern and has a functional group interacting with a plating catalyst or a precursor thereof; and a mesh-like metal layer which is disposed on the patterned to-be-plated layer and has a plurality of metal thin wires intersecting each other, an average thickness of the patterned to-be-plated layer is 0.05 to 100 ?m, an average thickness of the metal layer is 0.05 to 0.5 ?m, and an average intersection growing rate at an intersection of metal thin wires of the mesh of the metal layer is 1.6 or less.

Abstract: Provided are a water decomposition apparatus and a water decomposition method that can maintain high gas generation efficiency even in an early stage of light irradiation and even in a case where time has elapsed and that can recover the gas generation amount of hydrogen gas or the like, can generate hydrogen gas or the like stably for a long time on an average, and can increase the integrated amount of generation of hydrogen for a long time, even in a case where time has elapsed and the gas generation amount of hydrogen gas or the like has decreased.

Abstract: A water electrolysis system decomposes an aqueous electrolyte solution into hydrogen and oxygen using light. The water electrolysis system includes a plurality of photoelectric conversion units that have at least one photoelectric conversion element and receive light to generate electrical energy, and a plurality of electrolyte cells in which hydrogen gas and oxygen gas are generated by electrolyzing the aqueous electrolyte solution using the electrical energy obtained by the photoelectric conversion units. The photoelectric conversion units and the electrolyte cells are electrically connected in series. The electrolyte cells are arranged between the photoelectric conversion units, and the photoelectric conversion units or the electrolyte cells located at respective ends in an arrangement state are electrically connected together.

Abstract: The present invention addresses the problem of providing a water-soluble cutting or grinding fluid that has excellent permeability and washability, that can be widely used in cutting or grinding, and that is particularly suitable for use in superfinishing. The present invention provides a water-soluble cutting or grinding fluid that contains a glycol compound (A), at least one substance (B) selected from the group consisting of organic amines and inorganic alkalis, a surfactant (C), and water (D), the water-soluble cutting or grinding fluid having a contact angle of 2 to 15° as measured using the ?/2 method one second after a drop of a dilution of the water-soluble cutting or grinding fluid is dropped on an SPCC-SB plate.

Abstract: A gas production apparatus is provided which includes: a module including a plurality of PN junctions connected in series to one another, each being formed of an inorganic semiconductor and having a light receiving surface; two gas generators that are provided at open ends of PN junctions at both extremities of the module, respectively, on a side of the light receiving surface; an electrolysis chamber which contains an aqueous electrolytic solution in contact with the two gas generators and contains gases generated by the two gas generators; and a diaphragm which is ion-permeable but gas-impermeable, and partitions the electrolysis chamber into two regions including the two gas generators, respectively, and containing hydrogen and oxygen, respectively.

Abstract: A workpiece is fixed by a retracting mechanical chuck mounted on a spindle head of a five-axis control machining center. The apparent outer diameter of the workpiece is increased by a jig. Clamp surfaces of the jaws and a support surface of the jig are formed on the machining center. A cutting tool is mounted on a spindle by an automatic tool exchanger. The workpiece is rotated about an axis to grind an end surface of the workpiece to approximately a predetermined target shape, which is a spherical surface. A grinder is then mounted on the spindle by the automatic tool exchanger, and the grinder is set relative to the workpiece by five-axis control such that the inclination angle, the offset amount, etc. satisfy a predetermined relationship according to the desired grinding. The grinder is then fed in the Z-axis direction to form the spherical surface by grinding.

Abstract: A transparent conductive film includes: a conductive stripe formed on a plastic support by a mask deposition process, the conductive stripe including a plurality of conductive lines made of a metal or an alloy having a film thickness of not less than 50 nm and not greater than 500 nm and a line width of not less than 0.3 mm and not greater than 1 mm in plan view and being arranged at an interval of not less than 3 mm and not greater than 20 mm; and a transparent conductive material layer formed to cover the plastic support and the conductive stripe, the transparent conductive material having a specific resistance of not greater than 4×10?3 ?·cm and a film thickness of not less than 20 ma and not greater than 500 nm.

Abstract: An organic electronic device includes at least an organic-inorganic layered barrier layer, a plastic support, a transparent electrode layer, an organic active layer, a metal electrode layer and an upper sealing member, and contains a strong acid polymer, wherein an n-type oxide semiconductor layer is provided adjacent to the metal electrode layer on the plastic support-side of the metal electrode layer.

Abstract: A workpiece is fixed by a retracting mechanical chuck mounted on a spindle head of a five-axis control machining center. The apparent outer diameter of the workpiece is increased by a jig. Clamp surfaces of the jaws and a support surface of the jig are formed on the machining center. A cutting tool is mounted on a spindle by an automatic tool exchanger. The workpiece is rotated about an axis to grind an end surface of the workpiece to approximately a predetermined target shape, which is a spherical surface. A grinder is then mounted on the spindle by the automatic tool exchanger, and the grinder is set relative to the workpiece by five-axis control such that the inclination angle, the offset amount, etc. satisfy a predetermined relationship according to the desired grinding. The grinder is then fed in the Z-axis direction to form the spherical surface by grinding.

Abstract: A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

Abstract: In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Abstract: A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100° C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component.

Abstract: A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L?2a is satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W?2b is satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.

Abstract: During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103?·cm or more.

Abstract: A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

Abstract: A method for manufacturing a photoconductive layer formed of Bi12MO20 particles (M is at least one of Si, Ge, and Ti) and constitutes a radiation imaging panel for recording radiation image information as an electrostatic latent image. The method includes the steps of molding a powder compact of Bi12MO20 particles, impregnating the powder compact with a macromolecular substance, and solidifying the macromolecular substance.

Abstract: A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100° C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component.

Abstract: During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103?·cm or more.