Abstract: To provide europium complexes having high photostability.

Abstract: To provide europium complexes having high photostability.

Abstract: Provided are: an anode active material for a lithium ion secondary battery with which high initial efficiency and battery capacity can be maintained and excellent cycling characteristics are achieved; and a method for producing such an active material. The anode active material for a lithium ion secondary battery, the active material comprising a Si compound and a carbonaceous material or a carbonaceous material and graphite, is obtained by a method comprising the steps of: mixing a Si compound, a carbon precursor, and, as appropriate, graphite powder; performing granulation/compaction; pulverizing the mixture to form composite particles; firing the composite particles in an inert gas atmosphere; and subjecting the pulverized and conglobated composite powder or the fired powder to air classification.

Abstract: The object of invention is providing an optical transceiver enhancing the probability of allowing the deterioration of an optical path to be correctly determined, and making it possible not to install a device for measuring the deterioration of characteristics of the optical path at the outside the optical transceiver. The optical transceiver includes a light emitting section, a light receiving section, and a determination section. The light emitting section transmits a first light signal to a second optical transceiver via an optical path. The light receiving section receives a second light signal transmitted from the second optical transceiver via the optical path. The determination section outputs the result of a determination on the amount of the change from an initial value to a value representing a received light amount in the reception by the light receiving section with respect to the second optical signal obtained at a predetermined timing point.

Abstract: Provided are: an anode active material for a lithium ion secondary battery with which high initial efficiency and battery capacity can be maintained and excellent cycling characteristics are achieved; and a method for producing such an active material. The anode active material for a lithium ion secondary battery, the active material comprising a Si compound and a carbonaceous material or a carbonaceous material and graphite, is obtained by a method comprising the steps of: mixing a Si compound, a carbon precursor, and, as appropriate, graphite powder; performing granulation/compaction; pulverizing the mixture to form composite particles; firing the composite particles in an inert gas atmosphere; and subjecting the pulverized and conglobated composite powder or the fired powder to air classification.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein R1a to R7a, R8, R9 and R10 to R18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Abstract: The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein R1a to R7a, R8, R9 and R10 to R18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Abstract: This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1?) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Abstract: For an optical transmitter in which an EA modulator modulates a laser beam emitted from an LD, a control circuit stops heating/cooling of the EA modulator when a casing temperature (TC) is within a range of a low-temperature side reference temperature (T_cool) and a high-temperature side reference temperature (T_heat), sets a bias voltage for the EA modulator to a bias voltage corresponding to the modulator temperature based on table information recorded on a memory circuit, heats the EA modulator and sets the bias voltage corresponding to the low-temperature side reference temperature when the casing temperature is equal to or lower than the low-temperature side reference temperature, and cools the EA modulator and sets the bias voltage corresponding to the high-temperature side reference temperature when the casing temperature is equal to or higher than the high-temperature side reference temperature.

Abstract: This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1?) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

Abstract: For an optical transmitter in which an EA modulator modulates a laser beam emitted from an LD, a control circuit stops heating/cooling of the EA modulator when a casing temperature (TC) is within a range of a low-temperature side reference temperature (T_cool) and a high-temperature side reference temperature (T_heat), sets a bias voltage for the EA modulator to a bias voltage corresponding to the modulator temperature based on table information recorded on a memory circuit, heats the EA modulator and sets the bias voltage corresponding to the low-temperature side reference temperature when the casing temperature is equal to or lower than the low-temperature side reference temperature, and cools the EA modulator and sets the bias voltage corresponding to the high-temperature side reference temperature when the casing temperature is equal to or higher than the high-temperature side reference temperature.

Abstract: A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.