Abstract: An extension part of a lower electrode extending to an outer side of an upper electrode in the lower electrode further extends to an upper surface of a semiconductor substrate to cover an end portion of the upper electrode in an outer surrounding part of a trench located, in an outer surrounding region in an extension direction, and a width of the trench is smallest in a trench end portion.

Abstract: A condition-estimating device includes a first device that updates a parameter Pm[i] and an internal state Qn[i] included in a voltage estimation model of a polymer electrolyte fuel cell, a second device that successively acquires a current I[i] and a measured voltage value Vmes[i], a third device that calculates an estimated voltage value Vest[i] by using the voltage estimation model including the updated Pm[i] and Qn[i], and a fourth device that corrects a correction factor CF[i] used for the update of Pm[i] and/or Qn[i] so as to decrease |Vmes[i]?Vest[i]|. The fault-determining device includes a fault determination device that performs fault determination of a polymer electrolyte fuel cell by using Vest[i], Pm_est[i], and/or Qn_est[i]. The condition-estimating/fault-determining device includes such condition-estimating device and fault-determining device.

Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Abstract: Provided is a semiconductor device capable of shielding X-rays irradiated from a side surface side of a semiconductor substrate and a method of manufacturing the same. The semiconductor device includes: gate insulating film; a gate electrode; a source/drain region; an element isolation region; a guard ring surrounding the element isolation region; an interlayer insulating film; a contact trench in the interlayer insulating film; a barrier metal film for shielding X-rays covering inner side surfaces and a bottom surface of the contact trench; and a metal film connected to the guard ring.