Patents by Inventor Kohei Miyoshi

Kohei Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230001129
    Abstract: To better fulfill a sleep-inducing function for a seated person, a seat device includes a pressing device provided in a seat back and configured to press a back or a waist of a seated person to induce breathing; at least one of a temperature adjusting device configured to change a temperature of a seat cushion and/or the seat back and a shape adjusting device configured to change a surface shape of the seat cushion and/or the seat back; and a controller configured to control the pressing device to press the back or the waist of the seated person at a set cycle corresponding to a breathing cycle of a person at a sleeping time, and control the at least one of the temperature adjusting device and the shape adjusting device.
    Type: Application
    Filed: December 2, 2020
    Publication date: January 5, 2023
    Inventors: Takayoshi ITO, Kensuke MIZOI, Kohei KOWATA, Taro MURAYAMA, Yuki YOSHIOKA, Kazuhiro OHSHIMA, Akira MIYOSHI, Ryuta KASHINO, Hajime YOSHIDA, Yichen LI, Naoya MATSUMOTO
  • Publication number: 20220396099
    Abstract: A tire that includes a tread portion having a designated mounting direction to a vehicle can comprise: an outer shoulder land portion having a greatest width, in the tire axial direction, of a ground contact surface among five land portions. The outer shoulder land portion can include a plurality of outer shoulder sipes connected to an outer shoulder circumferential groove. An outer middle land portion can include a plurality of outer middle sipes extending completely across the outer middle land portion in the tire axial direction. The outer shoulder sipes and the outer middle sipes each can include a pair of sipe walls. The outer shoulder sipes and the outer middle sipes can each include a body portion in which the pair of sipe walls are disposed substantially parallel to each other. A width of a body portion of each outer shoulder sipe can be greater than a width of a body portion of each outer middle sipe.
    Type: Application
    Filed: June 14, 2022
    Publication date: December 15, 2022
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventors: Tomohisa KURIYAMA, Ryota IKEDA, Daichi TAKATSUKI, Kohei MIYOSHI
  • Publication number: 20220203774
    Abstract: A tire includes a tread portion including first and second tread edges, circumferential grooves, and land portions. The land portions include a crown land portion, a first middle land portion, and a second middle land portion. Under a 50% loaded condition, the first middle land portion, the crown land portion, and the second middle land portion respectively have axial widths W1m, Wc, and W2m of ground contact surfaces, the widths satisfying the following formula, W1m>Wc>W2m. The crown land portion includes an outer ground contact surface and an inner ground contact surface. The outer ground contact surface and the inner ground contact surface respectively have widths Wco and Wci in the tire axial direction, the widths satisfying the following formula, Wco>Wci.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 30, 2022
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: Tomohisa KURIYAMA, Ryota IKEDA, Chisato OMORI, Kohei MIYOSHI, Hiroaki KOGA
  • Patent number: 10923882
    Abstract: A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4° or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: February 16, 2021
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Kohei Miyoshi, Koichi Naniwae
  • Patent number: 10520804
    Abstract: A portable radiographic imaging apparatus includes a sensor and a case that houses sensor panel. Radiation detector elements are arrayed two-dimensionally in the sensor panel. The case comprises a corner where two side walls are adjacent. The side walls are made of a continuous fiber reinforced resin that comprises one or more fiber layers oriented in a predetermined direction. The fiber layers are oriented in a direction from one to the other of the adjacent side walls in the corner. A breakpoint where the fiber layers are discontinuous over an entire thickness in a wall thickness direction is not present in an area of at least one of the corners.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: December 31, 2019
    Assignee: Konica Minolta, Inc.
    Inventor: Kohei Miyoshi
  • Patent number: 10488534
    Abstract: A portable radiography device includes a housing with a front plate, a back plate, and a sensor panel accommodated therein. Electronic components disposed on the back plate side of the sensor panel are used to read a charge generated by the radiation detection element as a signal value and generate heat when reading the signal value. A heat conduction member is pressed by the back plate and the electronic components resulting in close contact of the heat conduction member with the electronic components and the back plate.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: November 26, 2019
    Assignee: KONICA MINOLTA, INC.
    Inventors: Manabu Kawaguchi, Kohei Miyoshi, Makoto Sumi
  • Publication number: 20190307401
    Abstract: A light emission and reception system for optical biometric measurement includes a light radiator and a light receiver. The light radiator radiates source light to a living body. The light receiver receives return light scattered from the living body. The light radiator and the light receiver are disposed at an end face of the system which is to be put into contact with a surface of the living body. The system measures biometric data of the living body based on intensity of the light detected by the light receiver. The light receiver comprises segments at different angular ranges around a center axis of the light radiator, and/or the light radiator comprises segments at different angular ranges around a center axis of the light receiver.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 10, 2019
    Inventors: Kohei MIYOSHI, Takao MISAWA, Kenji KAWADA
  • Publication number: 20190305520
    Abstract: A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4° or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.
    Type: Application
    Filed: April 1, 2019
    Publication date: October 3, 2019
    Applicant: USHIO OPTO SEMICONDUCTORS, INC.
    Inventors: Kohei MIYOSHI, Koichi NANIWAE
  • Patent number: 10290770
    Abstract: A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06?Y/X?0.12.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: May 14, 2019
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventor: Kohei Miyoshi
  • Publication number: 20190018151
    Abstract: A portable radiation image capturing apparatus is provided with a sensor panel in which a plurality of radiation detecting elements are arranged two-dimensionally and a case which is formed with a front plate on a side where radiation enters and a back plate on an opposite side. The sensor panel is stored in the case. The portable radiation image capturing apparatus includes the following. An electronic component is provided on the back plate side of the sensor panel and generates heat when charge generated in the radiation detecting element is read out as a signal value. A heat conductive member is provided between the electronic component and the back plate. The heat conductive member is positioned pressed between the back plate and the electronic component in a state in which the heat conductive member is in close contact with the electronic component and the heat conductive member is in close contact with the back plate.
    Type: Application
    Filed: October 27, 2016
    Publication date: January 17, 2019
    Inventors: Manabu KAWAGUCHI, Kohei MIYOSHI, Makoto SUMI
  • Publication number: 20180309024
    Abstract: A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06?Y/X?0.12.
    Type: Application
    Filed: October 19, 2016
    Publication date: October 25, 2018
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventor: Kohei MIYOSHI
  • Publication number: 20180143524
    Abstract: A portable radiographic imaging apparatus includes a sensor and a case that houses sensor panel. Radiation detector elements are arrayed two-dimensionally in the sensor panel. The case comprises a corner where two side walls are adjacent. The side walls are made of a continuous fiber reinforced resin that comprises one or more fiber layers oriented in a predetermined direction. The fiber layers are oriented in a direction from one to the other of the adjacent side walls in the corner. A breakpoint where the fiber layers are discontinuous over an entire thickness in a wall thickness direction is not present in an area of at least one of the corners.
    Type: Application
    Filed: November 17, 2017
    Publication date: May 24, 2018
    Applicant: Konica Minolta, Inc.
    Inventor: Kohei Miyoshi
  • Patent number: 9954138
    Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: April 24, 2018
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Kohei Miyoshi, Masashi Tsukihara
  • Patent number: 9842967
    Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: December 12, 2017
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masashi Tsukihara, Kohei Miyoshi, Toru Sugiyama
  • Patent number: 9818907
    Abstract: Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x?0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0?y3?0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: November 14, 2017
    Assignee: Ushio Denki Kabushiki Kaisha
    Inventors: Kohei Miyoshi, Masashi Tsukihara
  • Publication number: 20170222091
    Abstract: Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains AlX1InX2GaX3N (wherein 0<X1?1, 0?X2<1, 0?X3<1, X1+X2+X3=1), and both the concentration of C contained therein and the concentration of O contained therein are less than or equal to 1×1017/cm3.
    Type: Application
    Filed: July 31, 2015
    Publication date: August 3, 2017
    Applicant: Ushio Denki Kabushiki Kaisha
    Inventors: Masashi TSUKIHARA, Kohei MIYOSHI, Toru SUGIYAMA
  • Publication number: 20170155013
    Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.
    Type: Application
    Filed: June 29, 2015
    Publication date: June 1, 2017
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Kohei MIYOSHI, Masashi TSUKIHARA
  • Publication number: 20170117441
    Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.
    Type: Application
    Filed: June 13, 2014
    Publication date: April 27, 2017
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masashi TSUKIHARA, Kohei MIYOSHI, Toru SUGIYAMA
  • Publication number: 20170084788
    Abstract: The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).
    Type: Application
    Filed: March 10, 2015
    Publication date: March 23, 2017
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Toru SUGIYAMA, Masashi TSUKIHARA, Kohei MIYOSHI
  • Patent number: D818591
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: May 22, 2018
    Assignee: KONICA MINOLTA, INC.
    Inventors: Tomonari Asai, Sei Mitsui, Takanori Oshima, Kohei Miyoshi