Abstract: Provided is a 5-rib tire that can have improved steering stability and noise performance A tread portion 2 includes four circumferential grooves 3 and five land portions 4. Two tread ends are ends of a 50%-load ground-contact surface. Each of the five land portions 4 is provided with no groove having a groove width greater than 2.0 mm, and is provided with only sipes 9. The five land portions 4 include a shoulder land portion 11. The shoulder land portion 11 is provided with a plurality of shoulder sipes 20. At least one of the shoulder sipes 20 includes an inclined portion 21 and an axial portion 22. The axial portion 22 cross the tread end.

Abstract: A tread portion 2 includes four circumferential grooves 3 and five land portions 4. Each of the five land portions 4 is provided with no groove having a groove width greater than 2.0 mm, and is provided with only sipes 9. The four circumferential grooves 3 include a shoulder circumferential groove 5. The five land portions 4 include a shoulder land portion 11 and a middle land portion 13. The middle land portion 13 is provided with a plurality of middle sipes 30. The shoulder land portion 11 is provided with a plurality of shoulder sipes 20 each extending from the shoulder circumferential groove 5 to a position beyond a tread end. At least one of the shoulder sipes 20 includes an inclined portion 21. A maximum angle of the inclined portion 21 with respect to a tire axial direction is not greater than a maximum angle of the middle sipe 30 with respect to the tire axial direction.

Abstract: A tire that includes a tread portion having a designated mounting direction to a vehicle can comprise: an outer shoulder land portion having a greatest width, in the tire axial direction, of a ground contact surface among five land portions. The outer shoulder land portion can include a plurality of outer shoulder sipes connected to an outer shoulder circumferential groove. An outer middle land portion can include a plurality of outer middle sipes extending completely across the outer middle land portion in the tire axial direction. The outer shoulder sipes and the outer middle sipes each can include a pair of sipe walls. The outer shoulder sipes and the outer middle sipes can each include a body portion in which the pair of sipe walls are disposed substantially parallel to each other. A width of a body portion of each outer shoulder sipe can be greater than a width of a body portion of each outer middle sipe.

Abstract: Provided is a 5-rib tire that can have improved steering stability and noise performance A tread portion 2 includes four circumferential grooves 3 and five land portions 4. Two tread ends are ends of a 50%-load ground-contact surface. Each of the five land portions 4 is provided with no groove having a groove width greater than 2.0 mm, and is provided with only sipes 9. The five land portions 4 include a shoulder land portion 11. The shoulder land portion 11 is provided with a plurality of shoulder sipes 20. At least one of the shoulder sipes 20 includes an inclined portion 21 and an axial portion 22. The axial portion 22 cross the tread end.

Abstract: A tread portion 2 includes four circumferential grooves 3 and five land portions 4. Each of the five land portions 4 is provided with no groove having a groove width greater than 2.0 mm, and is provided with only sipes 9. The four circumferential grooves 3 include a shoulder circumferential groove 5. The five land portions 4 include a shoulder land portion 11 and a middle land portion 13. The middle land portion 13 is provided with a plurality of middle sipes 30. The shoulder land portion 11 is provided with a plurality of shoulder sipes 20 each extending from the shoulder circumferential groove 5 to a position beyond a tread end. At least one of the shoulder sipes 20 includes an inclined portion 21. A maximum angle of the inclined portion 21 with respect to a tire axial direction is not greater than a maximum angle of the middle sipe 30 with respect to the tire axial direction.

Abstract: A tire that includes a tread portion having a designated mounting direction to a vehicle can comprise: an outer shoulder land portion having a greatest width, in the tire axial direction, of a ground contact surface among five land portions. The outer shoulder land portion can include a plurality of outer shoulder sipes connected to an outer shoulder circumferential groove. An outer middle land portion can include a plurality of outer middle sipes extending completely across the outer middle land portion in the tire axial direction. The outer shoulder sipes and the outer middle sipes each can include a pair of sipe walls. The outer shoulder sipes and the outer middle sipes can each include a body portion in which the pair of sipe walls are disposed substantially parallel to each other. A width of a body portion of each outer shoulder sipe can be greater than a width of a body portion of each outer middle sipe.

Abstract: A tire includes a tread portion including first and second tread edges, circumferential grooves, and land portions. The land portions include a crown land portion, a first middle land portion, and a second middle land portion. Under a 50% loaded condition, the first middle land portion, the crown land portion, and the second middle land portion respectively have axial widths W1m, Wc, and W2m of ground contact surfaces, the widths satisfying the following formula, W1m>Wc>W2m. The crown land portion includes an outer ground contact surface and an inner ground contact surface. The outer ground contact surface and the inner ground contact surface respectively have widths Wco and Wci in the tire axial direction, the widths satisfying the following formula, Wco>Wci.

Abstract: A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4° or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.

Abstract: A portable radiographic imaging apparatus includes a sensor and a case that houses sensor panel. Radiation detector elements are arrayed two-dimensionally in the sensor panel. The case comprises a corner where two side walls are adjacent. The side walls are made of a continuous fiber reinforced resin that comprises one or more fiber layers oriented in a predetermined direction. The fiber layers are oriented in a direction from one to the other of the adjacent side walls in the corner. A breakpoint where the fiber layers are discontinuous over an entire thickness in a wall thickness direction is not present in an area of at least one of the corners.

Abstract: A portable radiography device includes a housing with a front plate, a back plate, and a sensor panel accommodated therein. Electronic components disposed on the back plate side of the sensor panel are used to read a charge generated by the radiation detection element as a signal value and generate heat when reading the signal value. A heat conduction member is pressed by the back plate and the electronic components resulting in close contact of the heat conduction member with the electronic components and the back plate.

Abstract: A light emission and reception system for optical biometric measurement includes a light radiator and a light receiver. The light radiator radiates source light to a living body. The light receiver receives return light scattered from the living body. The light radiator and the light receiver are disposed at an end face of the system which is to be put into contact with a surface of the living body. The system measures biometric data of the living body based on intensity of the light detected by the light receiver. The light receiver comprises segments at different angular ranges around a center axis of the light radiator, and/or the light radiator comprises segments at different angular ranges around a center axis of the light receiver.

Abstract: A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4° or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.

Abstract: A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06?Y/X?0.12.

Abstract: A portable radiation image capturing apparatus is provided with a sensor panel in which a plurality of radiation detecting elements are arranged two-dimensionally and a case which is formed with a front plate on a side where radiation enters and a back plate on an opposite side. The sensor panel is stored in the case. The portable radiation image capturing apparatus includes the following. An electronic component is provided on the back plate side of the sensor panel and generates heat when charge generated in the radiation detecting element is read out as a signal value. A heat conductive member is provided between the electronic component and the back plate. The heat conductive member is positioned pressed between the back plate and the electronic component in a state in which the heat conductive member is in close contact with the electronic component and the heat conductive member is in close contact with the back plate.

Abstract: A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06?Y/X?0.12.

Abstract: A portable radiographic imaging apparatus includes a sensor and a case that houses sensor panel. Radiation detector elements are arrayed two-dimensionally in the sensor panel. The case comprises a corner where two side walls are adjacent. The side walls are made of a continuous fiber reinforced resin that comprises one or more fiber layers oriented in a predetermined direction. The fiber layers are oriented in a direction from one to the other of the adjacent side walls in the corner. A breakpoint where the fiber layers are discontinuous over an entire thickness in a wall thickness direction is not present in an area of at least one of the corners.

Abstract: An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Alx1Gay1Inz1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of Inx2Ga1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Alx3Gay3Inz3N (0<x3<1, 0<y3<1, 0?z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.

Abstract: Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InxGa1-xN (0<x?0.05) and a fourth semiconductor layer constituted of n-Aly1Gay2Iny3N (0<y1<1, 0<y2<1, 0?y3?0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.