Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: storing login information when a player performs a login for the first time in a particular time frame; granting a right when a login is performed every certain time period in the particular time frame; and granting, in the case where the login information is not stored and the certain time period in which the right is not granted has elapsed when a login is performed in the particular time frame, the right on the basis of the certain time period in which the right is not granted.

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: storing login information when a player performs a login for the first time in a particular time frame; granting a right when a login is performed every certain time period in the particular time frame; and granting, in the case where the login information is not stored and the certain time period in which the right is not granted has elapsed when a login is performed in the particular time frame, the right on the basis of the certain time period in which the right is not granted.