Abstract: A method for manufacturing a semiconductor device includes forming a first insulating film including a first opening; forming, on the first insulating film, a first resist including a second opening larger than the first opening; forming a gate electrode in the first opening, in the second opening, above the second opening, and on the first resist; forming a second resist on the gate electrode, the second resist covering at least a region above the second opening in the vertical direction, the second resist being wider than the second opening; etching the gate electrode and up to the middle of the first resist using the second resist as a mask; removing the first resist and the second resist; and forming a second insulating film covering an exposed portion of the gate electrode and an exposed portion of the first insulating film.

Abstract: A method for manufacturing a semiconductor device of the present disclosure includes: ion-implanting impurities into a source-drain electrodes forming region where a source electrode and a drain electrode are to be formed on a nitride semiconductor layer formed on a substrate; forming a silicon nitride film on the surface of the nitride semiconductor layer by a plasma-enhanced chemical vapor deposition method, the silicon nitride film constituting a surface protecting sacrifice film and having a refractive index of 1.80 or more and less than 1.88 and a thickness of 100 nm or more and 500 nm or less; and heat-treating the nitride semiconductor layer on which the surface protecting sacrifice film is formed.

Abstract: Provided herein is: a SiC substrate having a front surface on which a GaN layer is stacked; a source electrode formed on a front surface of the GaN layer; a MIM capacitor formed on a front surface of the source electrode; and a via hole extending from a rear surface of the SiC substrate to reach the source electrode; wherein a barrier metal layer is included in the source electrode, and wherein the depth end of the via hole is placed between a rear surface of the source electrode and a rear surface of the barrier metal layer. Accordingly, intrusion of a halogen element, in particular, Br, into an insulating film that is placed in the MIM capacitor, is suppressed over a long term.

Abstract: A method for analyzing a sample containing metal fine particles with an inductively coupled plasma mass spectrometer. The method enables analysis of the sample without the need of standard metal fine particles. Specifically, the present invention relates to a method for analyzing metal fine particles in liquid by use of an inductively coupled plasma mass spectrometer. In the method, the analysis apparatus is provided with a standard solution introduction apparatus including a standard solution storage unit for storing a standard solution containing a specific element in a known concentration, a syringe pump for suctioning and discharging the standard solution, and a solution introduction unit having a standard solution nebulizer and a standard solution spray chamber that are supplied with the standard solution, the standard solution is directly supplied to the standard solution nebulizer at a flow rate of 3 ?L/min or less.

Abstract: The present invention provides a method for analyzing a sample containing metal fine particles with an inductive coupling plasma mass spectrometer. The method enables analysis of the sample without the need of standard metal fine particles. Specifically, the present invention relates to a method for analyzing metal fine particles in liquid by use of an inductive coupling plasma mass spectrometer. In the method, the analysis apparatus is provided with a standard solution introduction apparatus including a standard solution storage unit for storing a standard solution containing a specific element in a known concentration, a syringe pump for suctioning and discharging the standard solution, and a solution introduction unit having a standard solution nebulizer and a standard solution spray chamber that are supplied with the standard solution, the standard solution is directly supplied to the standard solution nebulizer at a flow rate of 3 ?L/min or less.

Abstract: A semiconductor wafer device according to the present invention includes a SiC substrate having an upper surface and a rear surface as a surface on the opposite side to the upper surface, and an impurity implantation layer provided on the entire rear surface of the SiC substrate, formed of a same base material as that forming the SiC substrate, including an impurity, and having a lower transmittance of visible light or infrared light than that of the SiC substrate.

Abstract: A method for manufacturing a semiconductor device (10) includes, in the following order: forming a first insulating film (14) on a semiconductor substrate (12); forming, on the first insulating film (14), wiring in which at least the uppermost layer is made of Au (16); implanting ions, which do not impair insulating properties even when implanted into the insulating film (14), into the upper surface of the wiring (16) and a region not covered with the wiring (16) on the upper surface of the first insulating film (14); and forming a second insulating film (18) that covers the wiring (16).

Abstract: A method for manufacturing a semiconductor device (10) includes, in the following order: forming a first insulating film (14) on a semiconductor substrate (12); forming, on the first insulating film (14), wiring in which at least the uppermost layer is made of Au (16); implanting ions, which do not impair insulating properties even when implanted into the insulating film (14), into the upper surface of the wiring (16) and a region not covered with the wiring (16) on the upper surface of the first insulating film (14); and forming a second insulating film (18) that covers the wiring (16).

Abstract: Provided herein is: a SiC substrate having a front surface on which a GaN layer is stacked; a source electrode formed on a front surface of the GaN layer; a MIM capacitor formed on a front surface of the source electrode; and a via hole extending from a rear surface of the SiC substrate to reach the source electrode; wherein a barrier metal layer is included in the source electrode, and wherein the depth end of the via hole is placed between a rear surface of the source electrode and a rear surface of the barrier metal layer. Accordingly, intrusion of a halogen element, in particular, Br, into an insulating film that is placed in the MIM capacitor, is suppressed over a long term.

Abstract: Included are forming, on a semiconductor substrate, an insulation film having an opening section where an opening is formed, forming a first resist on the insulation film while avoiding the opening section and the semiconductor substrate exposed via the opening section, forming a first metal on the opening section, the semiconductor substrate exposed via the opening section, and the first resist by a vapor deposition method or a sputtering method, removing, by a lift-off method, the first resist and the first metal on the first resist, forming, on the insulation film, a second resist allowing the first metal to be exposed, causing the first metal to grow a second metal by an electroless plating method, and removing the second resist, where these processings are included in the listed order.

Abstract: Included are forming, on a semiconductor substrate, an insulation film having an opening section where an opening is formed, forming a first resist on the insulation film while avoiding the opening section and the semiconductor substrate exposed via the opening section, forming a first metal on the opening section, the semiconductor substrate exposed via the opening section, and the first resist by a vapor deposition method or a sputtering method, removing, by a lift-off method, the first resist and the first metal on the first resist, forming, on the insulation film, a second resist allowing the first metal to be exposed, causing the first metal to grow a second metal by an electroless plating method, and removing the second resist, where these processings are included in the listed order.

Abstract: A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer, and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal.

Abstract: A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer, and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal.

Abstract: A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer, and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal.

Abstract: A surface mount high-frequency circuit is configured such that a plurality of ground pads 41 and a plurality of external connection ground conductors 51 are discretely disposed to surround a signal line pad 42 and an external connection signal line conductor 52, and a plurality of interlayer connection ground conductors 31 and that a plurality of columnar ground conductors 12 are discretely disposed to surround an interlayer connection signal line conductor 32. Thus, it is possible to suppress radiation of an unnecessary signal to the outside using a simple production process that is completed by only a wafer process without separately preparing a component such as a shield cover case.

Abstract: A surface mount high-frequency circuit is configured such that a plurality of ground pads 41 and a plurality of external connection ground conductors 51 are discretely disposed to surround a signal line pad 42 and an external connection signal line conductor 52, and a plurality of interlayer connection ground conductors 31 and that a plurality of columnar ground conductors 12 are discretely disposed to surround an interlayer connection signal line conductor 32. Thus, it is possible to suppress radiation of an unnecessary signal to the outside using a simple production process that is completed by only a wafer process without separately preparing a component such as a shield cover case.

Abstract: A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having a transmittance with respect to red light or infrared light lower than that of the substrate and a material of the substrate being mixed in the reaction layer, and a metal thin film layer formed on a back surface of the reaction layer and formed of the same material as the transmission preventing metal.

Abstract: In a sample introducing system that can be easily adapted to a variety of analytical conditions without being affected by a flow rate of gas introduced into an analytical device, can introduce an analytical sample into the analytical device without loss, and can contribute to a simple and highly accurate high-sensitivity analysis, a pretreatment device removes unnecessary components from an untreated sample gas containing the analytical sample. A treated sample gas that has been pretreated by the pretreatment device is introduced into the analytical device via a connection gas flow channel. A gas addition device that adds a carrier gas to the treated sample gas flowing toward the analytical device in the connection gas flow channel has a means for changing the addition flow rate of the carrier gas. Pressure fluctuations of the gas containing the analytical sample are restricted by a pressure adjusting device upstream of the gas addition device.

Abstract: Analytical method and analytical system are presented, wherein properties of the carrier gas conveying fine particles and gas components generated by laser ablation can be prevented from inhibiting the optimization of analysis conditions, and plural kinds of elements can be stably measured with high sensitivity and good accuracy without losing operability, speed, and convenience when fine particles generated by laser ablation are plasma-analyzed. A sample ? is converted into fine particles by a laser ablation device in the atmosphere of a first gas. The fine particles are conveyed from the laser ablation device to a gas replacement device by using the first gas as a carrier gas. The first gas of at least part of the carrier gas conveying the fine particles is replaced with a second gas by means of the gas replacement device. The fine particles are conveyed from the gas replacement device to the plasma analyzer by the carrier gas that has been subjected to the gas replacement.

Abstract: In a sample introducing system that can be easily adapted to a variety of analytical conditions without being affected by a flow rate of gas introduced into an analytical device, can introduce an analytical sample into the analytical device without loss, and can contribute to a simple and highly accurate high-sensitivity analysis, a pretreatment device removes unnecessary components from an untreated sample gas containing the analytical sample. A treated sample gas that has been pretreated by the pretreatment device is introduced into the analytical device via a connection gas flow channel. A gas addition device that adds a carrier gas to the treated sample gas flowing toward the analytical device in the connection gas flow channel has a means for changing the addition flow rate of the carrier gas. Pressure fluctuations of the gas containing the analytical sample are restricted by a pressure adjusting device upstream of the gas addition device.