Abstract: A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.

Abstract: A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.

Abstract: According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.

Abstract: A semiconductor memory device according to an embodiment includes first and second conductive layers and first and second pillar. The first pillar penetrates the first conductive layers, and includes one part of a first semiconductor layer. The second pillar penetrates the second conductive layer and is provided on the first pillar. The second pillar includes another part of the first semiconductor layer. An area of the second pillar is smaller than an area of the first pillar. The first semiconductor layer includes a first portion facing an uppermost one of the first conductive layers and a second portion facing the second conductive layer. The first semiconductor layer is continuous at least from the first portion to the second portion.