Patents by Inventor Kohei OKUDAIRA

Kohei OKUDAIRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10657999
    Abstract: A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: May 19, 2020
    Assignee: ADVANCED MATERIAL TECHNOLOGIES, INC.
    Inventors: Kouji Abe, Toshiyuki Watanabe, Masafumi Tanaka, Kohei Okudaira, Hiroyasu Sekino, Yuuji Honda
  • Publication number: 20170309764
    Abstract: To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Inventors: Yuuji HONDA, Kohei OKUDAIRA, Yukari MIKAMI
  • Publication number: 20170133048
    Abstract: A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
    Type: Application
    Filed: June 20, 2014
    Publication date: May 11, 2017
    Inventors: Kouji ABE, Toshiyuki WATANABE, Masafumi TANAKA, Kohei OKUDAIRA, Hiroyasu SEKINO, Yuuji HONDA
  • Publication number: 20160005897
    Abstract: To provide an electronic component having a protective film formed with a good uniformity, over the entire surface thereof. An aspect of the present invention is an electronic component having a protective film formed over the entire surface thereof, the electronic component has elements and wirings formed on a base body, and the protective film has been formed by a CVD method, over an entire surface of said electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying an raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.
    Type: Application
    Filed: June 30, 2015
    Publication date: January 7, 2016
    Inventors: Yuuji HONDA, Kohei OKUDAIRA, Yukari MIKAMI