Patents by Inventor Kohei SAKAIKE

Kohei SAKAIKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10636803
    Abstract: A semiconductor memory device includes a semiconductor member extending in a first direction, a first interconnect extending in a second direction crossing the first direction, and a first electrode disposed between the semiconductor member and the first interconnect. A curvature radius of a corner portion facing the semiconductor member in the first electrode is larger than a curvature radius of a corner portion facing the first interconnect in the first electrode.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: April 28, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Tatsuya Kato, Fumitaka Arai, Kohei Sakaike, Satoshi Nagashima
  • Patent number: 10103155
    Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: October 16, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kohei Sakaike, Toshiyuki Iwamoto, Tatsuya Kato, Keisuke Kikutani, Fumitaka Arai, Satoshi Nagashima, Koichi Sakata, Yuta Watanabe
  • Publication number: 20180269218
    Abstract: A semiconductor memory device includes a semiconductor member extending in a first direction, a first interconnect extending in a second direction crossing the first direction, and a first electrode disposed between the semiconductor member and the first interconnect. A curvature radius of a corner portion facing the semiconductor member in the first electrode is larger than a curvature radius of a corner portion facing the first interconnect in the first electrode.
    Type: Application
    Filed: September 14, 2017
    Publication date: September 20, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Tatsuya KATO, Fumitaka Arai, Kohei Sakaike, Satoshi Nagashima
  • Patent number: 9847342
    Abstract: A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: December 19, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Satoshi Nagashima, Katsumi Yamamoto, Kohei Sakaike, Tatsuya Kato, Keisuke Kikutani, Fumitaka Arai, Atsushi Murakoshi, Shunichi Takeuchi, Katsuyuki Sekine
  • Publication number: 20170263619
    Abstract: A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.
    Type: Application
    Filed: September 16, 2016
    Publication date: September 14, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi NAGASHIMA, Katsumi YAMAMOTO, Kohei SAKAIKE, Tatsuya KATO, Keisuke KlKUTANI, Fumitaka ARAI, Atsushi MURAKOSHI, Shunichi TAKEUCHI, Katsuyuki SEKINE
  • Publication number: 20170263615
    Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.
    Type: Application
    Filed: March 3, 2017
    Publication date: September 14, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kohei SAKAIKE, Toshiyuki IWAMOTO, Tatsuya KATO, Keisuke KlKUTANI, Fumitaka ARAI, Satoshi NAGASHIMA, Koichi SAKATA, Yuta WATANABE
  • Patent number: 9343576
    Abstract: The present invention provides a thin film forming method. The method includes the steps of: providing a first substrate, of which a surface is covered with a thin film; forming a plurality of openings through the thin film; forming a hollow portion between the first substrate and the thin film by etching the first substrate through the openings; bringing the thin film into contact with a second substrate with a liquid interposed between the thin film and the second substrate; and heating the first substrate and/or the second substrate. In the step of heating, the liquid interposed between the thin film and the second substrate evaporates off, which results in that the thin film is separated from the first substrate and transferred onto the second substrate.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: May 17, 2016
    Assignee: Hiroshima University
    Inventors: Seiichiro Higashi, Kohei Sakaike, Yoshitaka Kobayashi, Shogo Nakamura, Muneki Akazawa
  • Publication number: 20150349137
    Abstract: The present invention provides a thin film forming method. The method includes the steps of: providing a first substrate, of which a surface is covered with a thin film; forming a plurality of openings through the thin film; forming a hollow portion between the first substrate and the thin film by etching the first substrate through the openings; bringing the thin film into contact with a second substrate with a liquid interposed between the thin film and the second substrate; and heating the first substrate and/or the second substrate. In the step of heating, the liquid interposed between the thin film and the second substrate evaporates off, which results in that the thin film is separated from the first substrate and transferred onto the second substrate.
    Type: Application
    Filed: August 7, 2015
    Publication date: December 3, 2015
    Inventors: Seiichiro HIGASHI, Kohei SAKAIKE, Yoshitaka KOBAYASHI, Shogo NAKAMURA, Muneki AKAZAWA