Abstract: Each of even-numbered photodiodes 1 and 2 for constituting a diode of the present invention (i) has regions (regions 1a through 1c and regions 2a through 2c) whose sizes in a certain direction are identical to sizes of regions of a reference diode 5, and (ii) has a channel width equal to ½ of a channel width W of the reference diode 5. The regions 1a through 1c and the regions 2a through 2c are arranged so as to (i) extend parallel to the certain direction which is provided parallel to a channel length L of the reference diode 5, and so as to be (ii) line-symmetric or point-symmetric to each other as a whole. The photodiodes 1 and 2 are electrically connected to each other in series so as to carry out an equivalent operation to that of the reference diode 5. Employing of the photodiodes 1 and 2 provides a configuration of diodes each having an identical characteristic and occupying a reduced area on a substrate.

Abstract: Provided is a display device that includes an optical sensor having a high sensitivity in which a potential difference of an accumulation node due to an illuminance difference on a light receiving surface after boosting is set greater than a potential difference of the same at an end of an integration period. The display device includes an optical sensor in a pixel region. The optical sensor includes a diode D1; a reset signal line RST for supplying a reset signal; a readout signal line RWS for supplying a readout signal; an accumulation node having a potential (VINT) that varies with an amount of light received by the diode D1 during a period from supply of the reset signal to supply of the readout signal; an amplifying element C1 for amplifying VINT according to the readout signal; and a sensor switching element M2 for reading out the amplified potential and outputting the same to an output line.

Abstract: The sensitivity of a photosensor is improved without decreasing read-out efficiency. The photosensor includes: a photodiode (D1) that converts received light into an electric current; a light shielding film (LS) that generates a parasitic capacitance between the photodiode (D1) and itself, a control signal line (RWST) that supplies a storage node (INT) with a reset signal and a read-out signal via the photodiode (D1); and a transistor (M2) connected with the storage node (INT) and an output line (OUT) for outputting, to the output line (OUT), an output signal corresponding to the potential of the storage node (INT) in response to the read-out signal.

Abstract: A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode, a capacitor that is connected to the photodiode via an accumulation node and accumulates charges according to an electric current in the photodiode; a sensor switching element transistor that causes the accumulation node and an output line to be conductive with respect to each other in response to a readout signal and outputs an output signal according to the potential of the accumulation node to the output line; a variable capacitor that is provided between the accumulation node and an input electrode, and whose capacitance varies when a pressure is applied by a touching operation; and a control switching element transistor to which a control signal for switching conduction and non-conduction between the variable capacitor and the accumulation node is input.

Abstract: A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode (photodetecting element); a capacitor connected to the photodiode via an accumulation node; a reset signal line to which a reset signal is supplied; a readout signal line to which a readout signal is supplied; a thin-film transistor (sensor switching element) that makes the accumulation node and an output line conductive with respect to each other and outputs an output signal according to the potential of the accumulation node; a microswitch that is capable of switching connection and disconnection between the accumulation node and an input electrode and provides connection when a pressure is applied by a touching operation; and a thin-film (control switching element) for switching conduction and non-conduction between the microswitch and the accumulation node.

Abstract: Provided are an optical sensor having a wider dynamic range with reduced temperature dependence, and a display apparatus in which these optical sensors are used. An optical sensor includes an accumulation node (INT); a reset signal line (RST); a readout signal line (RWS); a photodiode (D1) (photodetecting element); a photodiode (D2) (reference element) that has a light-shielding layer; a thin-film transistor (M1) (first switching element) that outputs a potential of the accumulation node (INT) in response to the readout signal during a sensing period; and a thin-film transistor (M2) (second switching element) that is provided between the accumulation node (INT) and the photodiode (D2), and that electrically separates the accumulation node (INT) from the photodiode (D2) when the potential of the accumulation node (INT) upon supply of the readout signal is higher than a potential on a side of the photodiode (D2) opposite to the accumulation node (INT).

Abstract: A capacitance variation detection circuit is provided in which detection sensitivity to variations in the liquid crystal capacitance can be improved. A capacitance variation detection circuit (10) includes a first variable capacitance portion (CLC1) connected to the voltage supply line; a second variable capacitance portion (CLC2) connected in series with the first variable capacitance portion (CLC1); and a TFT (15) connected to the second variable capacitance portion (CLC2) to be driven depending on the capacitance value of the first variable capacitance (CLC1) and the capacitance value of the second variable capacitance (CLC2), to output an electrical signal corresponding to these capacitance values.

Abstract: An information processing device includes: a memory that stores function identifiers assigned to functions built into the information processing device, and function identifiers assigned to functions not built into the information processing device; a display controller that causes a display unit to display the function identifiers stored in the memory; a manipulation unit that accepts manipulation for specifying one of the function identifiers displayed by the display controller; and a transmission unit that transmits, if the one of the function identifiers which has been specified by the manipulation is assigned to one of the functions not built into the information processing device, the specified one of the information identifiers or an information item indicating one of the functions to which is assigned one of the information identifiers which has been specified by the manipulation, to a predetermined device.

Abstract: An optical sensor is provided with a photodiode (D1) which receives light in a first range, including light to be detected, and a photodiode (D2) which receives light in a second range other than the light to be detected. For instance, the photodiode (D1) receives light at all the incident angles, and the photodiode (D2) has a light blocking film on an incident light path so as to selectively receive only the incident light from the oblique directions. The differential between the output from the photodiode (D1) and that from the photodiode (D2) is read out as sensor output.

Abstract: A display device includes a photosensor in a pixel region (1) of an active matrix substrate (100). The display device includes a light shielding film (LS) provided on the side of a photodiode (D1) that is opposite to the light receiving face thereof, and an electrode (CTL) provided opposing the light shielding film (LS) so as to form a capacitor (CSER) in series with parasitic capacitance (Cc and Ca) between the light shielding film (LS) and the photodiode (D1). A signal for reducing a voltage drop in a storage node (INT) that accompanies a change in the potential of a reset signal is applied to the electrode (CTL) when a sensing period starts.

Abstract: The present invention relates to a display device including a photosensor in a pixel region. The photosensor of the present invention includes a diode (D1) that receives incident light, reset signal wiring (RST) that supplies a reset signal, readout signal wiring (RWS) that supplies a readout signal, a storage node (INT) whose potential changes in accordance with the amount of light received by the photodetection element in a sensing period, the sensing period being from when the reset signal is supplied until when the readout signal is supplied, an amplification element (C1) that amplifies the potential of the storage node in accordance with the readout signal, and a sensor switching element (M2) for reading out the potential amplified by the amplification element to output wiring (OUT) as sensor circuit output.

Abstract: A display device includes a photosensor in a pixel region (1) of an active matrix substrate (100). The photosensor includes a photodiode (D1), a photodiode (D2) as a reference element connected in series to the photodiode (D1) and having a light shielding layer that blocks incident light, a storage capacitor (CINT), one electrode of which is connected to a connection point between the photodiodes (D1, D2), that stores output current from the photodiodes (D1, D2), reset signal wiring (RST) that supplies a reset signal to the photosensor, readout signal wiring (RWS) that supplies a readout signal to the photosensor, and a thin-film transistor (M2) having a control electrode connected to a connection point between the photodiodes (D1, D2). A capacitor (Cref) is provided between the cathode of the photodiode (D2) and the readout signal wiring (RWS).

Abstract: An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.

Abstract: The controlling apparatus is provided with: a memory that stores application software; a setting part that sets an operational manner related to power consumption of an apparatus running the application software, corresponding to the application software stored in the memory; and a controller that controls the power consumption of the apparatus according to the operational manner set by the setting part.

Abstract: A display device includes a photosensor on an active matrix substrate. The photosensor includes a photodetection element (D1) that receives incident light; reset signal wiring (RST) that supplies a reset signal to the photosensor; readout signal wiring (RWS) that supplies a readout signal to the photosensor; and a sensor switching element (M2) that, in accordance with the readout signal, reads out photocurrent that has been output from the photodetection element (D1) from when the reset signal is supplied until when the readout signal is supplied. The sensor switching element (M2) is a four-terminal amplifier having two control electrodes, such as a double gate TFT or a floating gate TFT.

Abstract: A display device includes a photosensor in a pixel region of an active matrix substrate. The photosensor includes a photodiode (D1) that receives incident light, a photodiode (D2) as a reference element connected in series to the photodiode (D1) and having a light shielding layer that blocks incident light, a capacitor (CINT), one electrode of which is connected to a connection point between the photodiodes (D1, D2), that accumulates output current from the photodiodes (D1, D2), reset signal wiring (RST) that supplies a reset signal to the photosensor, readout signal wiring (RWS) that supplies a readout signal to the photosensor, and a thin film transistor (M2) having a control electrode connected to a connection point between the photodiodes (D1, D2).

Abstract: A display device includes a photosensor in a pixel region of an active matrix substrate. The photosensor includes a photodiode (D1) that receives incident light, a photodiode (D2) as a reference element connected in series to the photodiode (D1) and having a light shielding layer that blocks incident light, a capacitor (CINT), one electrode of which is connected to a connection point between the photodiodes (D1, D2), that accumulates output current from the photodiodes (D1, D2), reset signal wiring (RST) that supplies a reset signal to the photosensor, readout signal wiring (RWS) that supplies a readout signal to the photosensor, and a thin film transistor (M2) having a control electrode connected to a connection point between the photodiodes (D1, D2).

Abstract: Each of even-numbered photodiodes 1 and 2 for constituting a diode of the present invention (i) has regions (regions 1a through 1c and regions 2a through 2c) whose sizes in a certain direction are identical to sizes of regions of a reference diode 5, and (ii) has a channel width equal to ½ of a channel width W of the reference diode 5. The regions 1a through 1c and the regions 2a through 2c are arranged so as to (i) extend parallel to the certain direction which is provided parallel to a channel length L of the reference diode 5, and so as to be (ii) line-symmetric or point-symmetric to each other as a whole. The photodiodes 1 and 2 are electrically connected to each other in series so as to carry out an equivalent operation to that of the reference diode 5. Employing of the photodiodes 1 and 2 provides a configuration of diodes each having an identical characteristic and occupying a reduced area on a substrate.

Abstract: There is provided a liquid crystal display device that can suppress a reduction in picture quality of a display image that is caused when one of adjacent pixels is affected by a fluctuation in electric potential of the other pixel. A liquid crystal display device including an array substrate that includes pixel electrodes and a plurality of TFTs that drive the pixel electrodes is used. Each of the TFTs is arranged in a region directly below one of the pixel electrodes that is different from and adjacent to the pixel electrode to be driven thereby. Further, the TFT includes a silicon film provided with a diffusion layer, as well as a gate electrode provided on the silicon film via an insulating film. The silicon film is formed so as to range from a region directly below the pixel electrode to be driven by the TFT to the region directly below the pixel electrode.

Abstract: A change of a beam current of an ion beam which passes an outside of the side of a forestage beam restricting shutter, and which is incident on a forestage multipoints Faraday is measured while the forestage beam restricting shutter is driven in a y direction by a forestage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the forestage beam restricting shutter. A change of a beam current of the ion beam which passes an outside of the side of a poststage beam restricting shutter, and which is incident on a poststage multipoints Faraday is measured while the poststage beam restricting shutter is driven in the y direction by a poststage shutter driving apparatus in order to obtain a beam current density distribution in the y direction of the ion beam at a position of the poststage beam restricting shutter.