Abstract: A wafer processing method includes a first fixing step of making a first resin sheet conform to a circular recessed portion and a ring-shaped reinforcing portion of a wafer by fixing an undersurface of the wafer to the first resin sheet, after the first fixing step, a second fixing step of forming a cavity between the first resin sheet fixed to the circular recessed portion and a second resin sheet by fixing the second resin sheet to the first resin sheet fixed to the ring-shaped reinforcing portion, after the second fixing step, a holding step of holding the second resin sheet of the wafer on a chuck table, and a groove forming step of forming a separating groove for separating the circular recessed portion and the ring-shaped reinforcing portion from each other.

Abstract: Pressing a protective member causes the protective member to be embedded in boundaries of adjacent ones of a plurality of devices serving as recesses on a front surface side of a substrate, and the protective member is ground so that the front surface side of the protective member is planarized. This makes it possible to eliminate a gap between the substrate and the protective member or to reduce this gap in size, while making it possible to eliminate a gap between a chuck table holding the substrate through the protective member and the protective member or reduce this gap in size. Hence, by carrying out these steps prior to grinding of the back surface side of the substrate, it is possible to prevent the back surface side of the substrate from becoming uneven, in association with grinding of the back surface side of the substrate.

Abstract: A method of handling a wafer includes a frame unit forming step of forming a frame unit by placing the wafer in a central opening of an annular frame, affixing a dicing tape to a surface of the annular frame, and affixing the wafer to the dicing tape, a dividing step of processing the wafer along projected dicing lines thereon to divide the wafer into individual device chips including respective devices, a package unit forming step of forming a package unit by affixing a sheet to another surface of the annular frame and surrounding the wafer with the dicing tape and the sheet, and a delivery step of delivering the package unit.

Abstract: A second relative speed of a grinding wheel and a wafer along a second direction in a grinding step is set such that a relative movement of the grinding wheel and the wafer along a first direction and a relative movement of the grinding wheel and the wafer along the second direction are concurrently initiated and are concurrently finished. Specifically, this second relative speed is set taking into consideration parameters which are optionally set, and an expected wear thickness of multiple grinding stones as known before or in a course of the grinding step, in other words, the absolute value of an expected variation in thickness of the grinding stones through the grinding step.

Abstract: A wafer processing method includes sticking an adhesive tape to the front surface of a wafer, disposing a thermocompression bonding sheet on the adhesive tape stuck to the front surface of the wafer. The thermocompression bonding sheet is heated and pressed by a flat member to execute pressure bonding of the thermocompression bonding sheet to the adhesive tape and integrate the thermocompression bonding sheet with the wafer. The processing method also includes holding the side of the thermocompression bonding sheet on a chuck table of a grinding apparatus and grinding the wafer into a desired thickness while supplying grinding water to the back surface of the wafer. The integrated wafer is separated from the chuck table and the thermocompression bonding sheet is separated from the adhesive tape.

Abstract: A method of processing a wafer having on a face side thereof a device area with a plurality of devices formed therein and an outer circumferential excess area surrounding the device area includes a grinding step for grinding a reverse side of the wafer corresponding to the device area with a grinding wheel that is smaller in diameter than the wafer, thereby forming a first portion corresponding to the device area and an annular second portion surrounding the first portion, the annular second portion being thicker and more protrusive toward a reverse side thereof than the first portion. In the grinding step, the grinding wheel and the wafer are moved relatively to each other so that the angle formed between the reverse side of the first portion and an inner side surface of the annular second portion is larger than 45° and smaller than 75°.

Abstract: A method of processing a wafer having on a face side thereof a device area with a plurality of devices formed therein and an outer circumferential excess area surrounding the device area includes a grinding step for grinding a reverse side of the wafer corresponding to the device area with a grinding wheel that is smaller in diameter than the wafer, thereby forming a first portion corresponding to the device area and an annular second portion surrounding the first portion, the annular second portion being thicker and more protrusive toward a reverse side thereof than the first portion. In the grinding step, the grinding wheel and the wafer are moved relatively to each other so that the angle formed between the reverse side of the first portion and an inner side surface of the annular second portion is larger than 45° and smaller than 75°.

Abstract: A wafer processing method includes a first grinding step and a second grinding step. In the first grinding step, first grinding abrasives are moved in a processing feed direction that is a direction orthogonal to a holding surface of a chuck table of grinding apparatus and a wafer is ground to form a first circular recess in the back surface of the wafer. In the second grinding step, second grinding abrasives formed of finer abrasive grains than the first grinding abrasives are moved down in an oblique direction from the center side of the wafer toward the periphery of the wafer and the first circular recess is ground.

Abstract: A wafer processing method includes a first grinding step and a second grinding step. In the first grinding step, first grinding abrasives are moved in a processing feed direction that is a direction orthogonal to a holding surface of a chuck table of grinding apparatus and a wafer is ground to form a first circular recess in the back surface of the wafer. In the second grinding step, second grinding abrasives formed of finer abrasive grains than the first grinding abrasives are moved down in an oblique direction from the center side of the wafer toward the periphery of the wafer and the first circular recess is ground.