Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a compressive stress CS (MPa) on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and DOL50%/DOLzero is 0.30 or more, where DOL50% (?m) is a depth at which the value of the compressive stress is 50% of the CS and DOLzero (?m) is a depth at which the value of the compressive stress is 0 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOLzero, which is a product of the compressive stress CS on the outermost surface and the stress depth DOLzero (?m), is 4.8×104 or more.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOLzero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 ?m, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Abstract: To provide a crystallized glass substrate including a surface with a compressive stress layer, in which, CS is 400 to 1400 MPa and CT×(T?2×DOLzero)/CS×DOLzero is 0.60 or more, where CS (MPa) denotes a compressive stress on an outermost surface of the compressive stress layer, DOLzero (?m) denotes a stress depth of the compressive stress layer at which the compressive stress is 0 MPa, CT (MPa) denotes a central stress determined by curve analysis, and T (?m) denotes a thickness of the substrate.

Abstract: Provided is a crystallized glass substrate including a surface with a compressive stress layer, in which a gradient A of a surface compressive stress from an outermost surface to a depth of 6 ?m in the compressive stress layer is 50.0 to 110.0 MPa/?m, a gradient B of a surface compressive stress from a depth of (a stress depth DOLzero—10 ?m) to the stress depth DOLzero is 2.5 to 15.0 MPa/?m, where the stress depth DOLzero is a depth of the compressive stress layer at a surface compressive stress of 0 MPa, and a hardness of the outermost surface at an indentation depth of 20 nm is 7.50 to 9.50 GPa.

Abstract: There is provided a target detection method and detection device that can detect a target by a simple method and configuration.

Abstract: There are provided a target detection method and detection device that include a calibration function and can maintain detection accuracy of a target irrespectively of a change (such as a temperature) in external environment. A target detection method includes: a step of calculating a quantitative value; a step of, at a first position information generation device, measuring a first target; a step of, at a second position information generation device, measuring a second target; a step of calculating a position of the second target using the first position information generation device as a position reference based on a measurement value of the first target obtained by the first position information generation device, a measurement value of the second target obtained by the second position information generation device, and the quantitative value; and a step of calibrating the quantitative value before measuring a third target using the second position information generation device.

Abstract: There are provided a positioning method and a positioning device that can position workpieces by a simple method and configuration. A positioning method includes: gripping at least one of first and second workpieces; obtaining point group data of the at least one gripped workpiece of the first and second workpieces; calculating a translation matrix of shape fitting point group data obtained by adjusting a position of the point group data to reference data in a position adjustment state of the first and second workpieces; calculating an inverse matrix based on the translation matrix; and positioning the first and second workpieces by moving the at least one gripped workpiece of the first and second workpieces based on at least one of the translation matrix and the inverse matrix.